Zobrazeno 1 - 10
of 44
pro vyhledávání: '"K Diesner"'
Publikováno v:
Journal of Applied Physics. 90:5018-5026
Thin films of semiconducting iron disilicide (β-FeSi2) with up to 8 at. % Cr addition grown on Si(001) and Si(111) substrates were studied by spectroscopic ellipsometry as well as transmission and reflection measurements at room temperature. The die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::154f885cd094b2b0f2e17aaa6b2a3161
https://doi.org/10.1063/1.1409578
https://doi.org/10.1063/1.1409578
Publikováno v:
Solar Energy Materials and Solar Cells. 67:121-127
Ion layer gas reaction (ILGAR), a novel thin-film technology for sulfides is introduced. Its peculiarity is the low-temperature conversion of a solid metal salt precursor into a sulfide compound by reaction with gaseous H2S. The capability of this te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::137f56eb82a29d9641da31d23e6535fc
https://doi.org/10.1016/s0927-0248(00)00271-3
https://doi.org/10.1016/s0927-0248(00)00271-3
Publikováno v:
Solid State Phenomena. :367-372
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06d52c2e794f806f8135cec5007f38c1
https://doi.org/10.4028/www.scientific.net/ssp.67-68.367
https://doi.org/10.4028/www.scientific.net/ssp.67-68.367
Autor:
M Muller, Helmut Tributsch, Ahmed Ennaoui, Chandrakant D. Lokhande, Pramod S. Patil, K. Diesner, Michael Giersig
Publikováno v:
Thin Solid Films. 340:18-23
Indium sulphide (In2S3) thin films have been successfully deposited on different substrates under varying deposition conditions using chemical bath deposition technique. The deposition mechanism of In2S3 thin films from thioacetamide deposition bath
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b4ab04c7d9e482e6557a0d8c9944c27
https://doi.org/10.1016/s0040-6090(98)00980-8
https://doi.org/10.1016/s0040-6090(98)00980-8
Autor:
Michael Giersig, Pramod S. Patil, Helmut Tributsch, M Muller, Ahmed Ennaoui, K. Diesner, Chandrakant D. Lokhande
Publikováno v:
Thin Solid Films. 330:70-75
Manganese sulphide (MnS) thin films have been deposited by a simple and inexpensive chemical bath deposition (CBD) method using thioacetamide as a sulphide ion source from an aqueous medium. The effect of preparative parameters on the film growth and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1723cdb7c8156036f05290227eb4432f
https://doi.org/10.1016/s0040-6090(98)00500-8
https://doi.org/10.1016/s0040-6090(98)00500-8
Publikováno v:
Journal of Crystal Growth. 182:389-393
The layered type compound WS2 (tungstenite) which exhibits an energy bandgap of 1.8 eV and a very high absorption coefficient above 105 cm−1 has been proposed as a potential absorber materials for thin film solar cells. In the present paper DC reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e74e48d43202b726f58ecf029ac2db81
https://doi.org/10.1016/s0022-0248(97)00355-2
https://doi.org/10.1016/s0022-0248(97)00355-2
Publikováno v:
Thin Solid Films. 311:146-150
Tungsten disulfide thin films were prepared by sulfurization of 3 layers at temperatures between 973 and 1223 K using 111-oriented silicon substrates. The films were investigated by X-ray diffraction, transmission electron (TEM) and scanning electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e647f0972ace52a79e5efb5d4489392
https://doi.org/10.1016/s0040-6090(97)00473-2
https://doi.org/10.1016/s0040-6090(97)00473-2
Publikováno v:
Solid State Phenomena. :301-308
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6b1f61c84729080474a8a94a34effea
https://doi.org/10.4028/www.scientific.net/ssp.51-52.301
https://doi.org/10.4028/www.scientific.net/ssp.51-52.301
Publikováno v:
Solid State Phenomena. :541-546
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac645a2da7955c04cebc1b8df18f20b
https://doi.org/10.4028/www.scientific.net/ssp.51-52.541
https://doi.org/10.4028/www.scientific.net/ssp.51-52.541
Publikováno v:
Thin Solid Films. 268:130-136
The morphology and microstructure of evaporated CuInS2 films is investigated with the emphasis on the effect of stoichiometry deviations. The compositions of In-rich and Cu-rich films obey the relations In2S3-CuInS2 and CuS-CuInS2 in the ternary phas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa474c2252b72f3a4a79593edaf4c5a8
https://doi.org/10.1016/0040-6090(95)06689-6
https://doi.org/10.1016/0040-6090(95)06689-6