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Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures

Autor: Rafal Jakiela, S. A. Dvoretsky, M. V. Yakushev, A. V. Voitsekhovskii, A. G. Korotaev, K. D. Mynbaev, Z. Swiatek, N. N. Mikhailov, V. S. Varavin, I. I. Izhnin, O. I. Fitsych

Publikováno v: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721

Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-effect measurements and mobility spectrum analysis. The stud

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b8136bd4e851cefb86a3162c48e57ad
https://doi.org/10.1007/s11664-021-08877-w

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Suppressing the Temperature Dependence of the Wavelength in Heterostructures with a Staggered Type-II InAsSb/InAsSbP Heterojunction

Autor: V. V. Romanov, A. A. Semakova, K. D. Mynbaev, Konstantin D. Moiseev, N. L. Bazhenov

Publikováno v: Semiconductors. 55:354-358

A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–3

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a749a1711f46d4c5c86d00eefb1fd0c6
https://doi.org/10.1134/s1063782621030155

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Nano-scale structural studies of defects in arsenic-implanted n and p-type HgCdTe films

Autor: A. V. Voitsekhovskii, H. V. Savytskyy, D. V. Marin, I. I. Izhnin, O. I. Fitsych, M. V. Yakushev, V. S. Varavin, Jerzy Morgiel, A. G. Korotaev, K. D. Mynbaev, O. Yu. Bonchyk, Z. Swiatek

Publikováno v: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401

Bright–field and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fluence in n and p-type Hg0.78Cd0.22Te films grown

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22174c5da87267785349a0b3f300e297
https://doi.org/10.1007/s13204-021-01704-y

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Optical and Structural Properties of HgCdTe Solid Solutions with a High CdTe Content

Autor: A. M. Smirnov, V. G. Remesnik, N. L. Bazhenov, K. D. Mynbaev, Nikolay N. Mikhailov, M. V. Yakushev

Publikováno v: Semiconductors. 54:1561-1566

The results of studying the optical transmission, photoconductivity, photoluminescence, and X-ray diffraction of HgCdTe solid-solution samples with a high content of CdTe (molar fraction 0.7–0.8), grown by molecular-beam epitaxy (MBE) and liquid-ph

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9c16efb579f9acbfc2775db48d26fd2b
https://doi.org/10.1134/s1063782620120258

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Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

Autor: A. G. Korotaev, Kurban Kurbanov, V. G. Remesnik, K. D. Mynbaev, Z. Świątek, S. A. Dvoretskii, A. V. Voitsekhovskii, M. V. Yakushev, Jerzy Morgiel, Nikolay N. Mikhailov, V. S. Varavin, H. V. Savytskyy, I. I. Izhnin, O. I. Fitsych, O. Yu. Bonchyk

Publikováno v: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295

By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microsco

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc012d947cedb20e0389749c9091a105
https://doi.org/10.1007/s11182-020-02034-2

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