Zobrazeno 1 - 10
of 22
pro vyhledávání: '"K Chourou"'
Autor:
Michel Pons, Y Grange, C Faure, J.M. Dedulle, Jean-Marie Bluet, Elisabeth Blanquet, M Anikin, P Grosse, K Chourou, Claude Bernard, Roland Madar, G Basset
Publikováno v:
Materials Science and Engineering: B. :82-85
The influence of the temperature and its gradient on powder features and defect formation is discussed in the light of experimental results in the physical vapour transport process. The recrystallization of the source powder during crystal growth app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44d6d2d75af44b3f18fc46c953d8c270
https://doi.org/10.1016/s0921-5107(98)00450-4
https://doi.org/10.1016/s0921-5107(98)00450-4
Autor:
Y Grange, M Couchaud, M Anikin, P Grosse, C Faure, B Ferrand, K Chourou, G Basset, C. Calvat, Roland Madar, Jean-Marie Bluet
Publikováno v:
Materials Science and Engineering: B. :58-62
We have investigated the influence of crucible purity on SiC crystals grown by physical vapor transport. A quadrupole gas analyser has been used to monitor the outgas stage of the growth system. Secondary ion mass spectroscopy (SIMS) and glow dischar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bceb96fa459c859c84f2e9c32c474473
https://doi.org/10.1016/s0921-5107(98)00445-0
https://doi.org/10.1016/s0921-5107(98)00445-0
Autor:
C Faure, Y Grange, Jean-Marie Bluet, K Chourou, P Grosse, M Anikin, Michel Pons, G Basset, Roland Madar
Publikováno v:
Materials Science and Engineering: B. :73-76
6H-SiC ingots with diameters of 25-35 mm with flat natural surfaces have been grown by the Modified Lely method. Influence of the growth conditions and crucible geometry on the growth front shape and on the enlargement of the seeds have been investig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cc698e9fc70829f215f5babea319541
https://doi.org/10.1016/s0921-5107(98)00448-6
https://doi.org/10.1016/s0921-5107(98)00448-6
Autor:
P Grosse, M Anikin, Claude Bernard, Roland Madar, G Basset, K Chourou, C Faure, Alexander Pisch, Michel Pons, J.M. Dedulle, Elisabeth Blanquet, Y Grange
Publikováno v:
Scopus-Elsevier
Different computational tools have helped to provide additional information on the sublimation growth of SiC single crystals by the modified-Lely method. The modelling work was motivated by the need of a better control of the local temperature field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5542c9e3fc2624dd1736c38f194f4e69
https://doi.org/10.1016/s0921-5107(98)00439-5
https://doi.org/10.1016/s0921-5107(98)00439-5
Publikováno v:
Materials Science and Engineering: B. :212-216
Infrared reflectivity is investigated as a useful tool for SiC polytype identification. The oscillator parameters (energy, oscillator strength and damping) of the weak folded modes, arising from the folding of the axial optic branch, are determined i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9aad965b5f783137d65885d25e8325ab
https://doi.org/10.1016/s0921-5107(98)00504-2
https://doi.org/10.1016/s0921-5107(98)00504-2
Autor:
M Anikin, Georges Bremond, Bernard Clerjaud, Roland Madar, K Chourou, C Naud, Gérard Guillot, V Lauer, Abdelkader Souifi
Publikováno v:
Materials Science and Engineering: B. :248-252
Vanadium deep acceptor level in bulk 6H–SiC and 4H–SiC has been studied by deep level transient spectroscopy (DLTS), optical absorption (OA), photoluminescence (PL) and deep level optical spectroscopy (DLOS). DLTS reveals two levels related to va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5de48ef834cf813623e561002a276cdf
https://doi.org/10.1016/s0921-5107(98)00512-1
https://doi.org/10.1016/s0921-5107(98)00512-1
Publikováno v:
Materials Science Forum. :45-48
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::993598176724e6656199ab30c3754e8e
https://doi.org/10.4028/www.scientific.net/msf.264-268.45
https://doi.org/10.4028/www.scientific.net/msf.264-268.45
Autor:
Gérard Guillot, Odette Chaix-Pluchery, Sandrine Juillaguet, K Chourou, V. Lauer, R. Pons, M Anikin, Jean-Marie Bluet, Michel Pons, Jean Camassel
Publikováno v:
Materials Science Forum. :17-20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50508b5a74275ab9e731c50de0959c75
https://doi.org/10.4028/www.scientific.net/msf.264-268.17
https://doi.org/10.4028/www.scientific.net/msf.264-268.17
Autor:
Roland Madar, Michel Pons, J.M. Dedulle, M Anikin, Elisabeth Blanquet, Claude Bernard, K Chourou
Publikováno v:
Surface and Coatings Technology. :279-284
The deposition of single SiC crystals has been processed inside a sealed enclosure at temperatures above 2300 K and pressures lower than 5 × 103 Pa by the modified Lely method. The purpose of this work is to present different optimized macroscopic m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86c8abe20480c783ccb27df82e184988
https://doi.org/10.1016/s0257-8972(97)00339-3
https://doi.org/10.1016/s0257-8972(97)00339-3
Autor:
Claude Bernard, Elisabeth Blanquet, Michel Pons, M. Labeau, K Chourou, S. Milita, J.M. Dedulle, J. Baruchel, M Anikin, Roland Madar
Publikováno v:
Scopus-Elsevier
A perfect understanding of the origin of defects in connection with crystal growth conditions is of prime importance for the future of SiC based electronic. In the generally used modified Lely method (M-Lely), the growth takes place by incongruent su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5fd3e32c213f27c4bb09b56b111e669c
http://www.scopus.com/inward/record.url?eid=2-s2.0-0001372413&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0001372413&partnerID=MN8TOARS
