Zobrazeno 1 - 5
of 5
pro vyhledávání: '"K B Fritzler"'
Autor:
K. B. Fritzler, I. B. Chistokhin
Publikováno v:
Technical Physics Letters. 46:1057-1059
The influence of the conditions of gettering in high-resistivity silicon during fabrication of PIN photodiodes on reverse dark currents has been studied. It is shown that gettering using a combination of phosphorus ion implantation and deposition of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ef27b5e4380dcba9bdcc24e6d608b96
https://doi.org/10.1134/s1063785020110048
https://doi.org/10.1134/s1063785020110048
Autor:
V. Ya. Prinz, K B Fritzler
Publikováno v:
Physics-Uspekhi. 62:54-69
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0483762b6eaa6406eb886e168389a0fc
https://doi.org/10.3367/ufne.2017.11.038239
https://doi.org/10.3367/ufne.2017.11.038239
Publikováno v:
Technical Physics Letters. 44:916-918
Correspondence between threading dislocations (TDs) in epitaxial films and the etch pits observed upon selective chemical etching of the samples was studied in Ge/Si(001) heterostructures. It is established that the density of TDs revealed in epitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85f9f9b495f25edcadaf64f35df1df5f
https://doi.org/10.1134/s1063785018100218
https://doi.org/10.1134/s1063785018100218
Publikováno v:
Technical Physics Letters. 41:731-733
The surface structure of silicon single crystals grown in the [111] direction using the floating zone technique and the distribution of electric parameters of these crystals over the crystal length are investigated. Geometrical parameters of the morp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd1a35c09ac124bc0eaa02f6f022c07b
https://doi.org/10.1134/s1063785015080088
https://doi.org/10.1134/s1063785015080088
Autor:
K. B. Fritzler, V. V. Kalinin, A. P. Vasilenko, P. L. Smirnov, E. M. Trukhanov, A. V. Kolesnikov
Publikováno v:
Technical Physics Letters. 33:521-523
The morphology of the side surface of floating-zone (FZ) single crystal silicon ingots with diameters up to 125 mm grown in the [111] direction on an FZ-20 (Haldor Topse) puller have been studied. The geometry and morphology of ridgelike protrusions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cef7f8632e466803ffda22504662ad5c
https://doi.org/10.1134/s1063785007060223
https://doi.org/10.1134/s1063785007060223