Zobrazeno 1 - 10
of 173
pro vyhledávání: '"KŘÁPEK, V."'
Publikováno v:
Eur. Phys. J. Special Topics 226, 2641 (2017)
Materials with correlated electrons often respond very strongly to external or internal influences, leading to instabilities and states of matter with broken symmetry. This behavior can be studied theoretically either by evaluating the linear respons
Externí odkaz:
http://arxiv.org/abs/1705.00875
Publikováno v:
Acta Physica Polonica A 129, A62-A65 (2016)
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found that the h
Externí odkaz:
http://arxiv.org/abs/1612.03596
Publikováno v:
Physical Review B 92, 241302 (2015)
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is given. This
Externí odkaz:
http://arxiv.org/abs/1612.03585
Publikováno v:
Phys. Rev. Lett. 110, 267204 (2013)
Hole and electron doped LaCoO3 is studied using dynamical mean-field theory. The one-particle spectra are analyzed and compared to the available experimental data, in particular the x-ray absorption spectra. Analyzing the temporal spin-spin correlati
Externí odkaz:
http://arxiv.org/abs/1302.4925
Publikováno v:
APPLIED PHYSICS LETTERS 97, 203107 (2010)
The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasin
Externí odkaz:
http://arxiv.org/abs/1209.6234
Autor:
Klenovský, P., Brehm, M., Křápek, V., Lausecker, E., Munzar, D., Hackl, F., Steiner, H., Fromherz, T., Bauer, G., Humlíček, J.
Publikováno v:
Physical Review B 86, 115305 (2012)
The pumping intensity (I) dependence of the photoluminescence (PL) spectra of perfectly laterally two-dimensionally ordered SiGe quantum dots on Si(001) substrates was studied. The PL results from recombinations of holes localized in the SiGe quantum
Externí odkaz:
http://arxiv.org/abs/1209.6230
Publikováno v:
Phys. Rev. B 86, 195104 (2012)
We use the dynamical mean-field theory to study a p-d Hubbard Hamiltonian for LaCoO3 derived from ab initio calculations in local density approximation (LDA+DMFT scheme). We address the origin of local moments observed above 100 K and discuss their a
Externí odkaz:
http://arxiv.org/abs/1207.3984
Publikováno v:
Phys. Rev. Lett. 109, 117206 (2012)
We employ the combination of the density functional and the dynamical mean-field theory (LDA+DMFT) to investigate the electronic structure and magnetic properties of SrCoO3, monocrystal of which were prepared recently. Our calculations lead to a ferr
Externí odkaz:
http://arxiv.org/abs/1202.0110
Autor:
Plumhof, J. D., Krapek, V., Ding, F., Jöns, K. D., Hafenbrak, R., Klenovsky, P., Herklotz, A., Dörr, K., Michler, P., Rastelli, A., Schmidt, O. G.
We study the effect of elastic anisotropic biaxial strain on the light emitted by neutral excitons confined in different kinds of semiconductor quantum dots (QDs). We find that the light polarization rotates by up to 80 degree and the excitonic fine
Externí odkaz:
http://arxiv.org/abs/1011.3003
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