Zobrazeno 1 - 10
of 311
pro vyhledávání: '"Kühnel K"'
Autor:
Boll, R., Rouzee, A., Adolph, M., Anielski, D., Aquila, A., Bari, S., Bomme, C., Bostedt, C., Bozek, J. D., Chapman, H. N., Christensen, L., Coffee, R., Coppola, N., De, S., Decleva, P., Epp, S. W., Erk, B., Filsinger, F., Foucar, L., Gorkhover, T., Gumprecht, L., Hoemke, A., Holmegaard, L., Johnsson, P., Kienitz, J. S., Kierspel, T., Krasniqi, F., Kuehnel, K. -U., Maurer, J., Messerschmidt, M., Moshammer, R., Mueller, Nele L. M., Rudek, B., Savelyev, E., Schlichting, I., Schmidt, C., Scholz, F., Schorb, S., Schulz, J., Seltmann, J., Stener, M., Stern, S., Techert, S., Thogersen, J, Trippel, S., Viefhaus, J., Vrakking, M, Stapelfeldt, H., Kuepper, J., Ullrich, J., Rudenko, A., Rolles, D.
This paper gives an account of our progress towards performing femtosecond time-resolved photoelectron diffraction on gas-phase molecules in a pump-probe setup combining optical lasers and an X-ray Free-Electron Laser. We present results of two exper
Externí odkaz:
http://arxiv.org/abs/1407.7782
Akademický článek
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A focus of work at IAP has been the development and optimization of spiral loaded cavities since the 1970s [A. Schempp et al, NIM 135, 409 (1976)]. These cavities feature a high efficiency, a compact design and a big variety of possible fields of app
Externí odkaz:
http://arxiv.org/abs/physics/0007088
Publikováno v:
In Microelectronic Engineering 25 June 2017 178:262-265
Publikováno v:
In Annals of Nuclear Energy October 2015 84:131-139
Akademický článek
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Autor:
von Hahn, R., Berg, F., Blaum, K., Crespo Lopez-Urrutia, J.R., Fellenberger, F., Froese, M., Grieser, M., Krantz, C., Kühnel, K.-U., Lange, M., Menk, S., Laux, F., Orlov, D.A., Repnow, R., Schröter, C.D., Shornikov, A., Sieber, T., Ullrich, J., Wolf, A., Rappaport, M., Zajfman, D.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 2011 269(24):2871-2874
Autor:
Mart, C., Kohlenbach, N.-D., Kühnel, K., Eßlinger, S., Czernohorsky, M., Ali, T., Weinreich, W., Eng, L.M.
The hafnium oxide (HfO2) material system offers a unique combination of outstanding physical properties, that enable a manifold of novel integrated ferroelectric, piezoelectric, and pyroelectric applications. Long-term stability is an essential conce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::bd30b7d57cb6ff50bdd9ce1122c3dc68
https://publica.fraunhofer.de/handle/publica/268678
https://publica.fraunhofer.de/handle/publica/268678
On-chip integration of solid-state thin-film lithium-ion batteries (LIBs) can be a feasible solution for integrating energy storage devices directly into microchips. Constituting an energy source in such devices requires an implementation of the batt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::0520250e0e4a684fe958329e56f45866
https://publica.fraunhofer.de/handle/publica/270453
https://publica.fraunhofer.de/handle/publica/270453
Autor:
Ali, T., Kühnel, K., Czernohorsky, M., Mart, C., Rudolph, M., Pätzold, B., Lehninger, D., Olivo, R., Lederer, M., Müller, F., Hoffmann, R., Metzger, J., Binder, R., Steinke, P., Kämpfe, T., Müller, J., Seidel, K., Eng, L.M.
We report on the high-temperature operation and reliability of the Si-doped hafnium oxide (HSO) ferroelectric FET (FeFET) emerging memory. In this study, we explore the role of high-temperature operation of the ferroelectric (FE) material on the FeFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::457f0b111da154d307c196cd4d0f6fd6
https://publica.fraunhofer.de/handle/publica/264764
https://publica.fraunhofer.de/handle/publica/264764