Zobrazeno 1 - 10
of 39
pro vyhledávání: '"K, Hassun"'
Publikováno v:
Energy Reports, Vol 6, Iss , Pp 46-54 (2020)
N-type Tin dioxide thin films with thickness (350 nm) prepared by thermal evaporation method. The thin film SnO2 was doped with Ag by the rate (0.01, 0.02 and 0.03). Atomic Force Microscopic (AFM) was adopted to determine the grain size and roughness
Externí odkaz:
https://doaj.org/article/ee61a1d28ba04b79a8f92efea759bc18
Publikováno v:
Ibn Al-Haitham Journal for Pure and Applied Sciences, Vol 26, Iss 2 (2017)
In this research the effect of grain size and effect of La2O3 doping on densification rate for the initial and intermediate stages of sintering were studied .The experimental results for α – cristobilite powder are modeled using ( L2-Regres
Externí odkaz:
https://doaj.org/article/17ff0152f9404f10bd3c6c2e3b128e24
Autor:
Samir A. Maki, Hanan K. Hassun
Publikováno v:
Ibn Al-Haitham Journal for Pure and Applied Sciences, Vol 29, Iss 2 (2017)
Different thicknesseses of polycrystalline ZnTe films have been deposited on to glass substrates by vacuum evaporation technique under vacuum 2.1x10-5 mbar. The structural characteristics studied by X-ray diffraction (XRD) showed that the films are p
Externí odkaz:
https://doaj.org/article/3b000fee98ff41a7a319dddb64f26ca6
Publikováno v:
Key Engineering Materials. 886:66-74
Thin films Tin sulfide SnS pure and doped with different ratios of Cu (X=0, 0.01, 0.03 and 0.05) were prepared using thermal evaporation with a vacuum of 4*10-6mbar on two types of substrates n-type Si and glass with (500) nm thickness for solar cell
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1234aeef28c74223a0469009239aefa
https://doi.org/10.4028/www.scientific.net/kem.886.66
https://doi.org/10.4028/www.scientific.net/kem.886.66
Publikováno v:
Key Engineering Materials. 886:57-65
Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24d307d9eb8734baf9df41ad4e54f41f
https://doi.org/10.4028/www.scientific.net/kem.886.57
https://doi.org/10.4028/www.scientific.net/kem.886.57
Autor:
Hanan K. Hassun, Bushra H. Hussein
Publikováno v:
Neuroquantology. 18:77-82
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bfa67416126af5448568d8c84e5dd60
https://doi.org/10.14704/nq.2020.18.5.nq20171
https://doi.org/10.14704/nq.2020.18.5.nq20171
Publikováno v:
TECHNOLOGIES AND MATERIALS FOR RENEWABLE ENERGY, ENVIRONMENT AND SUSTAINABILITY: TMREES21Gr.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8743f9a6a7a067a06ed43ff3122e2d14
https://doi.org/10.1063/5.0092335
https://doi.org/10.1063/5.0092335
Publikováno v:
Journal of Engineering and Applied Sciences. 14:4773-4779
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f00d81e2616dd3c4c06a29bf3169da9f
https://doi.org/10.36478/jeasci.2019.4773.4779
https://doi.org/10.36478/jeasci.2019.4773.4779
Publikováno v:
Energy Procedia. 157:90-99
The operating characteristics of optoelectronic devices depend critically on the properties physical of the constituent materials, interesting compound has been focused on this research formed from group III and V of the periodic table. Thin film n-I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7258c9b2a518af55e6f6885cf603f1d4
https://doi.org/10.1016/j.egypro.2018.11.168
https://doi.org/10.1016/j.egypro.2018.11.168
Publikováno v:
Energy Procedia. 157:84-89
In this study, the surface roughness is calculated using SEM images on a large scale with aid of AFM image for SnO2 thin surface fabricated by depositing onto glass substrates at room temperature using thermal evaporation technique, where different t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e6a78bf3113ce4da4a168708a90d0d
https://doi.org/10.1016/j.egypro.2018.11.167
https://doi.org/10.1016/j.egypro.2018.11.167