Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Jyun-Hao Liao"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 640-643 (2020)
In this article, we report the design and fabrication for planar-type incandescent microfilaments on the silicon on insulator (SOI) wafer. The micro-electro-mechanical systems (MEMS) process with XeF2 etching is used to construct the suspension struc
Externí odkaz:
https://doaj.org/article/56e2ec2d61c0444cabbb1d0da88e71e8
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 180-185 (2019)
In this paper, we report on the fabrication and high performance of power p-n diodes grown on free-standing (FS) GaN substrate. The key technique to enhance the high breakdown voltage and suppress the surface leakage current is the isolation process.
Externí odkaz:
https://doaj.org/article/d23473d8c5984e15a4b286b085c6b410
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 640-643 (2020)
In this article, we report the design and fabrication for planar-type incandescent microfilaments on the silicon on insulator (SOI) wafer. The micro-electro-mechanical systems (MEMS) process with XeF2 etching is used to construct the suspension struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7fdc10256863f0a1f6c117be7d816dc
https://doi.org/10.1109/jeds.2020.3004618
https://doi.org/10.1109/jeds.2020.3004618
Publikováno v:
IEEE Journal of Quantum Electronics. 55:1-6
In this paper, we demonstrate a high-resolution $960\times 540$ blue-emitting active matrix micro-display. The blue micro-display have a diagonal length of 0.55 inch, a pixel size of $8~\mu \text{m}$ with a pixel pitch of $12.8~\mu \text{m}$ , and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9650ec68118942f6c6473dac42ac4c28
https://doi.org/10.1109/jqe.2019.2900540
https://doi.org/10.1109/jqe.2019.2900540
Comparative study on performance of AlGaN/GaN MS-HEMTs with SiNx, SiOx, and SiNO surface passivation
Publikováno v:
Solid-State Electronics. 170:107824
A comparative investigation on device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) with SiNx, SiOx, and SiON passivation by using plasma enhanced chemical vapor deposition (PECVD) technique is conducted. The electrical perf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7084da44dbd10f052f7a33acb971dc2
https://doi.org/10.1016/j.sse.2020.107824
https://doi.org/10.1016/j.sse.2020.107824
In this letter, we demonstrate high-performance AlGaN/GaN planar Schottky barrier diodes (SBDs) on the silicon substrate with field plate structure for increasing breakdown voltage VB. A low turn-on resistance RON (3.55 mΩ-cm2), low reverse leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e7ddf8c767996e86812e1e65df1953a
Publikováno v:
Journal of Vacuum Science & Technology B. 37:032002
In this letter, the authors report the micro-opto-electro-mechanical system-based large-area tunable Fabry-Perot filters (FPF) with an aperture size of up to 300 μm. The sputtered zinc oxide layer is used as the sacrificial layer during the releasin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ec63c8646edcfa6121b4ab95f146851
https://doi.org/10.1116/1.5085259
https://doi.org/10.1116/1.5085259
Autor:
Yu, C. -J, Lin, T. -C, Chen, C. -J, Jyun Hao Liao, Wu, M. -C, Hsu, W. -C, Chuang, C. -Y, Liu, J. -Z
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::14d20bd5a29c0fb84a1d2aa4b71c6af0
http://www.scopus.com/inward/record.url?eid=2-s2.0-85066986161&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-85066986161&partnerID=MN8TOARS
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2019, Vol. 37 Issue 3, pN.PAG-N.PAG, 4p
Publikováno v:
IEEE Journal of Quantum Electronics; Apr2019, Vol. 55 Issue 2, p1-6, 6p