Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Jyrki Molarius"'
Autor:
Riikka L. Puurunen, Mikhail Chubarov, Tommi Kääriäinen, Cheol Seong Hwang, Çaǧla Özgit-Akgün, Geert Rampelberg, Erwan Rauwel, Rong Chen, Anjana Devi, David Campbell Cameron, Thomas E. Seidel, Jussi Lyytinen, Liliya Elnikova, A. A. Malkov, Markku Leskelä, Georgi Popov, Henrik Pedersen, Tanja Kallio, A. Outi I. Krause, Jaana Kanervo, Jakob Kuhs, Tobias Törndahl, Gloria Gottardi, A. A. Malygin, Nathanaelle Schneider, Fred Roozeboom, Małgorzata Norek, Marja-Leena Kääriäinen, Adam A. Łapicki, Dohan Kim, Irina Kärkkänen, Fabien Piallat, Harri Lipsanen, Esko Ahvenniemi, Oili Ylivaara, Lev Klibanov, Jyrki Molarius, Claudia Wiemer, Shih Hui Jen, J. Ruud van Ommen, Andrew R. Akbashev, Kestutis Grigoras, Dmitry Suyatin, Christian Militzer, Yury Koshtyal, Hele Savin, Jonas Sundqvist, Timo Sajavaara, Luca Lamagna, Véronique Cremers, Stefan Ivanov Boyadjiev, Mikhail Panov, Saima Ali, Oksana Yurkevich, Dennis M. Hausmann, Ivan Khmelnitskiy, Hossein Salami, Viktor Drozd, Mikhael Bechelany, Robin H. A. Ras, Abdelkader Mennad, Maria Berdova
Publikováno v:
Journal of Vacuum Science and Technology. Part A: International Journal Devoted to Vacuum, Surfaces, and Films, 35(1)
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (1), ⟨10.1116/1.4971389⟩
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 35(1):010801, 1-13. AVS Science and Technology Society
Ahvenniemi, E, Akbashev, A, Ali, S, Bechelany, M, Berdova, M, Boyadjiev, S, Cameron, D, Chen, R, Chubarov, M, Cremers, V, Devi, A, Drozd, V, Elnikova, L, Gottardi, G, Grigoras, K, Hausmann, D, Hwang, C S, Jen, S-H, Kallio, T, Kanervo, J, Khmelnitskiy, I, Kim, D H, Klibanov, L, Koshtyal, Y, Krause, O, Kuhs, J, Kärkkänen, I, Kääriäinen, M-L, Kääriäinen, T, Lamagna, L, Lapicki, A, Leskelä, M, Lipsanen, H, Lyytinen, J, Malkov, A, Malygin, A, Mennad, A, Militzer, C, Molarius, J, Norek, M, Özgit-Akgün, Ç, Panov, M, Pedersen, H, Piallat, F, Popov, G, Puurunen, R, Rampelberg, G, Ras, R H A, Rauwel, E, Roozeboom, F, Sajavaara, T, Salami, H, Savin, H, Schneider, N, Seidel, T E, Sundqvist, J, Suyatin, D, Törndahl, T, van Ommen, J R, Wiemer, C, Ylivaara, O & Yurkevich, O 2017, ' Review Article: Recommended reading list of early publications on atomic layer deposition : Outcome of the "Virtual Project on the History of ALD" ', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 35, no. 1, 010801 . https://doi.org/10.1116/1.4971389
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2, 35
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2017, 35 (1), ⟨10.1116/1.4971389⟩
Journal of Vacuum Science and Technology A
Journal of Vacuum Science and Technology A, American Vacuum Society, 2017, 35 (1), ⟨10.1116/1.4971389⟩
Journal of Vacuum Science and Technology A: Vacuum, Surfaces, and Films, 35(1):010801, 1-13. AVS Science and Technology Society
Ahvenniemi, E, Akbashev, A, Ali, S, Bechelany, M, Berdova, M, Boyadjiev, S, Cameron, D, Chen, R, Chubarov, M, Cremers, V, Devi, A, Drozd, V, Elnikova, L, Gottardi, G, Grigoras, K, Hausmann, D, Hwang, C S, Jen, S-H, Kallio, T, Kanervo, J, Khmelnitskiy, I, Kim, D H, Klibanov, L, Koshtyal, Y, Krause, O, Kuhs, J, Kärkkänen, I, Kääriäinen, M-L, Kääriäinen, T, Lamagna, L, Lapicki, A, Leskelä, M, Lipsanen, H, Lyytinen, J, Malkov, A, Malygin, A, Mennad, A, Militzer, C, Molarius, J, Norek, M, Özgit-Akgün, Ç, Panov, M, Pedersen, H, Piallat, F, Popov, G, Puurunen, R, Rampelberg, G, Ras, R H A, Rauwel, E, Roozeboom, F, Sajavaara, T, Salami, H, Savin, H, Schneider, N, Seidel, T E, Sundqvist, J, Suyatin, D, Törndahl, T, van Ommen, J R, Wiemer, C, Ylivaara, O & Yurkevich, O 2017, ' Review Article: Recommended reading list of early publications on atomic layer deposition : Outcome of the "Virtual Project on the History of ALD" ', Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, vol. 35, no. 1, 010801 . https://doi.org/10.1116/1.4971389
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2, 35
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2017, 35 (1), ⟨10.1116/1.4971389⟩
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin c
Autor:
Tommi Riekkinen, S. van Dijken, Pasi Kostamo, A. Nurmela, Jyrki Molarius, Tuomas Pensala, Markku Ylilammi
Publikováno v:
Riekkinen, T, Nurmela, A, Molarius, J, Pensala, T, Kostamo, P, Ylilammi, M & van Dijken, S 2009, ' Influence of the seed layer on structural and electro-acoustic properties of sputter-deposited AlN resonators ', Thin Solid Films, vol. 517, no. 24, pp. 6588-6592 . https://doi.org/10.1016/j.tsf.2009.04.060
The growth of high-quality AlN films has been studied by reactive sputtering onto Mo electrodes with Ni, Ti, and TiW seed layers and subsequent integration into thin film bulk acoustic wave resonators. The crystalline structure and morphology of the
Publikováno v:
Riekkinen, T, Molarius, J & Ylilammi, M 2007, ' Electrode metallization for high permittivity oxide RF thin film capacitors ', Journal of the European Ceramic Society, vol. 27, no. 8-9, pp. 2983-2987 . https://doi.org/10.1016/j.jeurceramsoc.2006.11.060
High permittivity oxide thin film capacitors for RF components should be integrated on the chip to form a complete miniaturized module, with other semiconductor or thin film components such as inductors, isolation capacitors, and bias resistors. The
Autor:
Tommi Riekkinen, Olga Lopez-Acevedo, Siyuan Zhang, Jyrki Molarius, Michelle A. Moram, Tomi Laurila, Miguel A. Caro, Markku Ylilammi
Publikováno v:
Caro, M, Zhang, S, Riekkinen, T, Ylilammi, M, Moram, M, Lopez-Acevedo, O, Molarius, J & Laurila, T 2015, ' Piezoelectric coefficients and spontaneous polarization of ScAlN ', Journal of Physics: Condensed Matter, vol. 27, no. 24, 245901 . https://doi.org/10.1088/0953-8984/27/24/245901
We present a computational study of spontaneous polarization and piezoelectricity in Sc(x)Al(1-x)N alloys in the compositional range from x = 0 to x = 0.5, obtained in the context of density functional theory and the Berry-phase theory of electric po
Publikováno v:
The Nano-Micro Interface : Bridging the Micro and Nano Worlds
Molarius, J, Riekkinen, T, Kulawski, M & Ylilammi, M 2015, Thin Film Piezomaterials for Bulk Acoustic Wave Technology . in M Van de Voorde, M Werner & H-J Fecht (eds), The Nano-Micro Interface : Bridging the Micro and Nano Worlds . 2nd edn, Wiley, pp. 243-270 . https://doi.org/10.1002/9783527679195.ch13
Molarius, J, Riekkinen, T, Kulawski, M & Ylilammi, M 2015, Thin Film Piezomaterials for Bulk Acoustic Wave Technology . in M Van de Voorde, M Werner & H-J Fecht (eds), The Nano-Micro Interface : Bridging the Micro and Nano Worlds . 2nd edn, Wiley, pp. 243-270 . https://doi.org/10.1002/9783527679195.ch13
In the first edition of "The Nano-Micro Interface," we discussed the piezoelectric quality of zinc oxide (ZnO) thin films. In this second edition's chapter, we have extended our view and included other piezoelectric materials like AlN, Sc-alloyed AlN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::560a61f5ec94bc68a5d7075ece21275a
https://cris.vtt.fi/en/publications/563b1f48-4295-4126-a90a-37bc68e71c13
https://cris.vtt.fi/en/publications/563b1f48-4295-4126-a90a-37bc68e71c13
Publikováno v:
Laurila, T, Zeng, K, Kivilahti, J K, Molarius, J & Suni, I 2002, ' TaC as a diffusion barrier between Si and Cu ', Journal of Applied Physics, vol. 91, no. 8, pp. 5391-5399 . https://doi.org/10.1063/1.1464652
The reaction mechanisms and related microstructures in the Si/TaC/Cu metallization system have been studied experimentally and theoretically by utilizing ternary Si-Ta-C and Ta-C-Cu phase diagrams as well as activity diagrams calculated at 800 °C. W
Publikováno v:
Laurila, T, Zeng, K, Molarius, J, Riekkinen, T, Suni, I & Kivilahti, J K 2002, ' Effect of oxygen on the reactions in Si/Ta/Cu and Si/TaC/Cu systems ', Microelectronic Engineering, vol. 64, no. 1-4, pp. 279-287 . https://doi.org/10.1016/S0167-9317(02)00800-6
The effect of oxygen on the reactions in the Si/Ta/Cu and Si/TaC/Cu metallization systems was investigated by utilizing the assessed Ta–O binary and the evaluated ternary Ta–C–O phase diagrams together with detailed transmission electron micros
Publikováno v:
Scopus-Elsevier
Rantamäki, R, Molarius, J, Tilli, M & Tuomi, T 1997, ' Flow pattern defects in Czochralski-grown silicon crystals ', Physica Scripta: Topical Issues, vol. T69, pp. 264-267 . https://doi.org/10.1088/0031-8949/1997/T69/055
Rantamäki, R, Molarius, J, Tilli, M & Tuomi, T 1997, ' Flow pattern defects in Czochralski-grown silicon crystals ', Physica Scripta: Topical Issues, vol. T69, pp. 264-267 . https://doi.org/10.1088/0031-8949/1997/T69/055
The radial distribution of grown-in microdefects in eight Czochralski-grown silicon crystals was measured by counting the flow pattern (FP) defects revealed by preferential etching. At the center of the crystal, the FP-defect density increased from 5
Autor:
Jaakko Salonen, Heikki Viljanen, Tommi Suni, Pradeep Dixit, Jyrki Molarius, Philippe Monnoyer
Publikováno v:
Dixit, P, Viljanen, H, Salonen, J, Molarius, J & Monnoyer, P 2013, Fabrication, electrical characterization and reliability study of partially electroplated tapered copper through-silicon vias . in 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2013 . IEEE Institute of Electrical and Electronic Engineers, pp. 190-193, 8th International Microsystems, Packaging, Assembly and Circuits Technology Conference-Green and Cloud: Creating Value and Toward Eco-Life, IMPACT 2013, Taipei, Taiwan, Province of China, 22/10/13 . https://doi.org/10.1109/IMPACT.2013.6706634
The fabrication, electrical characterization and reliability study of copper through-silicon via (TSV) is reported. All the fabrication steps needed in this process have a process temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::597dce3b70ffb6de97004f731ddd05eb
https://cris.vtt.fi/en/publications/cd8728a1-1d2f-47ac-8108-68690090bfec
https://cris.vtt.fi/en/publications/cd8728a1-1d2f-47ac-8108-68690090bfec
Publikováno v:
Xia, Z, Ristolainen, EO O, Ronkainen, H, Saarilahti, J, Grahn, K & Molarius, J 1995, ' Structural properties of Ge-implanted Si 1 − x Ge x layers ', Vacuum, vol. 46, no. 8-10, pp. 1071-1075 . https://doi.org/10.1016/0042-207X(95)00109-3
The structural properties of epitaxial Si1 - xGex layers formed by high-dose germanium implantation have been studied. Transmission electron microscopy (TEM) and Rutherford backscattering channeling (RBS-C) were employed to evaluate the annealing beh