Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Jyrki Kaitila"'
Autor:
Thomas Herzog, Mohamed Abd Allah, Robert Thalhammer, Doris Schmitt-Landsiedel, Werner Weber, Jyrki Kaitila
Publikováno v:
Solid-State Electronics. 54:1041-1046
We present a new method to manufacture solidly mounted bulk acoustic wave resonators. This new process introduces the use of wafer bonding techniques and sacrificial surface removal to manufacture solidly mounted resonators having special properties.
Publikováno v:
Journal of Materials Science: Materials in Electronics. 14:431-435
Piezoelectric zinc oxide films are used in microelectromechanical systems (MEMS) applications, where they can be used in sensors to detect, e.g., pressure or acceleration. Beside sensors, ZnO films are applied in activation devices, where force is ne
Autor:
John D. Larson, Jyrki Kaitila
Publikováno v:
2013 IEEE International Ultrasonics Symposium (IUS).
In this paper we give experimental observations of the complex valued Lamb mode in a FBAR resonator, using the AIM [1] and standard S-parameter measurements. Furthermore, a theoretical explanation of the observed behavior, based on the Berlincourt fo
Publikováno v:
2011 IEEE Radio Frequency Integrated Circuits Symposium.
We present a 22µW, 2.0GHz FBAR oscillator - the lowest power reported to date for a GHz-range oscillator of this type. Low power consumption is achieved through co-design with a high R p FBAR resonator and a weakly-forward biased bulk connection. An
Autor:
Donald Lee, Richard C. Ruby, Steve Ortiz, Qiang Zou, Martha K. Small, Frank Bi, Yury Oshmyansky, Jyrki Kaitila
Publikováno v:
2010 IEEE International Frequency Control Symposium.
This paper demonstrates two variations of Temperature compensated (TempCo) FBAR resonators with high Kt2. One 1.5 GHz non-symmetric stack design TempCo FBAR resonator has a Kt2 of 4.28% and linear TCF of 0 ppm/°C. A second, quasi-symmetric stack des
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
We propose a new way to temperature compensate solidly mounted bulk acoustic wave resonators (SMRs). With the proposed process high Q, high electromechanical coupling coefficient, fully temperature compensated resonators have been successfully fabric
Autor:
Jyrki Kaitila, Doris Schmitt-Landsiedel, Werner Weber, Thomas Herzog, Mohamed Abd Allah, Robert Thalhammer
Publikováno v:
2009 Proceedings of the European Solid State Device Research Conference.
A new process to manufacture solidly mounted bulk acoustic wave resonators using wafer bonding and sacrificial surface removal is introduced. With this process, AlN thin films are obtained having excellent c-axis orientation with XRD rocking curve FW
Publikováno v:
2009 IEEE International Ultrasonics Symposium.
Temperature compensation is becoming more and more a high demand for RF filters in order to successfully meet the tightening specifications over a wide range of temperatures. We show our results on temperature compensation by adding thin SiO 2 layers
Publikováno v:
IEEE Ultrasonics Symposium, 2005..
The dominant trend in mobile communication is the reduction of cost and size of the components. Bulk-Acoustic-Wave (BAW) filters are ideally suited to replace conventional RF-fil- ters for all major cell phone standards such as GSM, CDMA and WCDMA. I
Publikováno v:
IEEE Ultrasonics Symposium, 2005..
The overall performance of bulk acoustic wave (BAW) filters is dominated by the effective coupling coefficient and the quality factor of the constituting BAW resonators. Whereas the effective coupling coefficient and its dependency on the layer stack