Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Jyh-Shiarn Cherng"'
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035242-035242-9 (2019)
High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor deposition (PVD) owing to its high peak power density, high degree of ionization, high plasma density and hence high ion flux towards the substrate that allows on
Externí odkaz:
https://doaj.org/article/8d763ed2fcc046afa8e906db6d720df9
Publikováno v:
Journal of Crystal Growth. 489:57-62
The microstructure and ionic conductivity of reactively sputtered yttria-stabilized zirconia (YSZ) films are systematically studied. Those films were reactively sputtered in various sputtering modes using a closed-loop controlled system with plasma e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a856605c9eec138c1c6aaabbb1d34c9b
https://doi.org/10.1016/j.jcrysgro.2018.02.039
https://doi.org/10.1016/j.jcrysgro.2018.02.039
Publikováno v:
Journal of Crystal Growth. 453:138-142
In this paper, a facile method to prepare a high c -axis orientation ZnO film is reported. We combine a high power impulse magnetron sputtering (HiPIMS) with an inductively coupled plasma (ICP) in purpose of improving the reaction activity of Zn spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ded2101cf8e41dd01a63c7384250e471
https://doi.org/10.1016/j.jcrysgro.2016.07.035
https://doi.org/10.1016/j.jcrysgro.2016.07.035
Publikováno v:
Vacuum. 180:109576
P-type nitrogen-doped zinc oxide (NZO) thin film was prepared on a glass substrate by reactive magnetron sputtering using zinc metal target and O2/N2 atmosphere. The structural, electrical and optical properties of the NZO films were investigated by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e62b1efb69946248dde208ab85ed48
https://doi.org/10.1016/j.vacuum.2020.109576
https://doi.org/10.1016/j.vacuum.2020.109576
Publikováno v:
Thin Solid Films. 574:66-70
The effects of residual stress and interface dislocations on the ionic conductivity of yttria stabilized zirconia (YSZ) polycrystalline nano-films deposited onto quartz substrate via pulsed-DC magnetron sputtering are systematically studied. The resi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2cb95a1c42cee9559e5e72a27d5c94e
https://doi.org/10.1016/j.tsf.2014.11.077
https://doi.org/10.1016/j.tsf.2014.11.077
Publikováno v:
Ceramics International. 40:6137-6142
Structures, strain, polarization, and dielectric permittivity of lead-free piezoceramics (1− x )(Bi 0.5 Na 0.5 )TiO 3 – x BaTiO 3 for x =0.03, 0.07, and 0.11 (abbreviated as BNB3T, BNB7T, and BNB11T) have been investigated systematically as funct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1aba3611105783a152ac0d3de9adec8
https://doi.org/10.1016/j.ceramint.2013.11.065
https://doi.org/10.1016/j.ceramint.2013.11.065
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035242-035242-9 (2019)
High power impulse magnetron sputtering (HiPIMS) is well known in modern physical vapor deposition (PVD) owing to its high peak power density, high degree of ionization, high plasma density and hence high ion flux towards the substrate that allows on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d886baf9ed4a0042d1c8cd5cdfedfa1a
https://doi.org/10.1063/1.5084031
https://doi.org/10.1063/1.5084031
Publikováno v:
Thin Solid Films. 544:148-151
Cubic yttria-stabilized zirconia (YSZ) polycrystalline films were fabricated onto quartz insulator substrates by reactive pulsed-DC magnetron sputtering using Zr–Y targets. The ionic conductivity of the as-deposited YSZ nano-film could be improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b114564ec16e8ff475aeb013cb9be91a
https://doi.org/10.1016/j.tsf.2013.03.134
https://doi.org/10.1016/j.tsf.2013.03.134
Publikováno v:
Thin Solid Films. 518:7263-7266
TaON–Ag nanocomposite thin films with Ag nano-particles embedded in TaON were prepared by reactive co-sputtering of Ta and Ag in the plasma of (O 2 + N 2 )/Ar. The deposition temperature was either at room temperature or 300 °C. These films were c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc2990e45a962992ee9e39cb96f4f78
https://doi.org/10.1016/j.tsf.2010.04.109
https://doi.org/10.1016/j.tsf.2010.04.109
Publikováno v:
Japanese Journal of Applied Physics. 54:01AD01
The leakage current behaviors of Al/ZrO2/Al and Al/yttria stabilized zirconia (YSZ)/Al devices are investigated for resistive random access memory (RRAM) applications. A silicon oxide layer (450 nm) is first formed on a Si wafer by thermal oxidation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::745d8b49b3ec6d46987f2569ae0ffbce
https://doi.org/10.7567/jjap.54.01ad01
https://doi.org/10.7567/jjap.54.01ad01