Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Jyh-Cherng Sheu"'
Autor:
Jing-Cheng Lin, Hon-Jarn Lin, R. Chen, Hsien-Chin Lin, Ming-Fang Wang, D. H. Chen, S.S. Lin, F. C. Yang, Huan-Neng Chen, S. M. Jang, Jonathan Chang, Kevin Huang, L. Yuan, Ming-Huan Tsai, B. R. Yang, C. C. Yeh, Tze-Liang Lee, S. L. Shue, C. H. Wang, W. Chang, K. F. Yu, C. O. Chui, Yung-Chow Peng, Y. Ku, Chuan-Ping Hou, Yung-Hsien Wu, Jyh-Cherng Sheu, Cheng Yun-Wei, Jun He, Po-Kang Wang, Y. K. Leung, C. P. Chen, Derek Lin, Geoffrey Yeap, Q. Fu, Y. C. Huang, Chun-Yen Chang, Kuang-Hsin Chen, X. Chen, Yung-Shun Chen, H. T. Yang, Ryan Lu, Chung-Kai Lin, S. H. Sun, T. S. Chang, H. T. Chiang, Chun-Kuang Chen, M. Cao, P. Hung, H. C. Lin, Jau-Yi Wu, F. L. Lai, B. Z. Tien, C. W. Wu, Yee-Chia Yeo, L. C. Lu, H. L. Shang, C. P. Lin, Wei-Heng Lin
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A leading edge 5nm CMOS platform technology has been defined and optimized for mobile and HPC applications. This industry-leading 5nm technology features, for the first time, full-fledged EUV, and high mobility channel (HMC) finFETs with densest 0.02
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b8ee1b2522d89b8b8ca2781720e4a62
https://doi.org/10.1109/iedm19573.2019.8993577
https://doi.org/10.1109/iedm19573.2019.8993577
Autor:
L.-D. Chen, Jyh-Cherng Sheu
Publikováno v:
AIAA Journal. 34:2090-2098
A numerical model, first-order accurate in time discretization and second-order accurate in space discretization, is presented for the simulation of time-dependent laminar diffusion flames. The numerical model uses a semi-implicit scheme for time mar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6ba18177776ba5bf0bcd6feef258310
https://doi.org/10.2514/3.13356
https://doi.org/10.2514/3.13356
Autor:
J.K. Ting, Yung-Shun Chen, Shu-Tine Yang, F.C. Yang, I.L. Wu, T.L. Hsu, K.C. Ting, Yu-Ling Lin, J.T. Tzeng, S.S. Chang, S.J. Chent, M.H. Chiang, Chung-Cheng Wu, Ming-Huan Tsai, Chun-Hsiung Lin, Jhon-Jhy Liaw, Kuei-Shun Chen, Jiunn-Ren Hwang, Meikei Ieong, W. Chang, T. Yamamoto, Shu-Chun Yang, Yuh-Jier Mii, R. Chen, S.M. Jang, Chun-Kuang Chen, J.Y. Cheng, Jyh-Cherng Sheu, Tze-Liang Lee, L.C. Lu, C.M. Liu, Carlos H. Diaz, Yi-Ming Sheu
Publikováno v:
CICC
An industry leading 28nm high-performance mobile SoC technology featuring metal-gate/high-k process is presented. The technology is optimized to offer wide power-to-performance transistor dynamic range and highest wired gate density with superior low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd6ff1d42f1120242abf6866741847b4
https://doi.org/10.1109/cicc.2011.6055355
https://doi.org/10.1109/cicc.2011.6055355
Autor:
Ming-Huan Tsai, Yu-Lien Huang, Li-Te Lin, Wang Shiang-Bau, Hung-Ming Chen, Eric Ou-Yang, Yuh-Jier Mii, Hsien-Hsin Lin, Hun-Jan Tao, Chia-Cheng Ho, Chen-Ping Chen, Jhon-Jhy Liaw, Jyh-Cherng Sheu, Feng Yuan, Chu-Yun Fu, Yi-Hsuan Liu, Li-Shiun Chen, Chia-Feng Hu, Chen-Nan Yeh, Shih-Peng Tai, Ming-Jie Huang, Chih-Sheng Chang, C.H. Chang, Shu-Tine Yang, Jeff J. Xu, Tsung-Lin Lee, Li-Shyue Lai, Shao-Ming Yu, Clement Hsingjen Wann, Kai-Ting Tseng, Leo Chen, Chih-Chieh Yeh, Ming-Feng Shieh, Chien-Chang Su, Jeng-Jung Shen, Shyue-Shyh Lin, Shih-Ting Hung, Hsien-Chin Lin, Shin-Chih Chen, Kin-Weng Wang, Yuan-Hung Chiu, Tsz-Mei Kwok, Fu-Kai Yang
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
FinFET is the most promising double-gate transistor architecture [1] to extend scaling over planar device. We present a high-performance and low-power FinFET module at 25 nm gate length. When normalized to the actual fin perimeter, N-FinFET and P-Fin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::144d7411e1ccabb3bfe552132a866a0f
https://doi.org/10.1109/iedm.2009.5424367
https://doi.org/10.1109/iedm.2009.5424367
Autor:
Jyh-Cherng Sheu, L.-D. Chen
Publikováno v:
38th Aerospace Sciences Meeting and Exhibit.
mass, momentum, energy, and species, are obtained using a computer program based Sheu and Chen ( 1996). A four-step reduced mechanism is extended to include In the present study, the methane oxidation is based reaction kinetics and reactive species f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffea0e4eadde9b033afb98709f55657
https://doi.org/10.2514/6.2000-690
https://doi.org/10.2514/6.2000-690
Publikováno v:
34th AIAA/ASME/SAE/ASEE Joint Propulsion Conference and Exhibit.
A three-step global model is developed to describe the thermal cracking of Norpar-13 under supercritical and near-critical conditions. This cracking model is incorporated into a multi-dimensional Computational Fluid Dynamics (CFD) code to simulate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baa841f6ab09e08d989e169f1295c82b
https://doi.org/10.2514/6.1998-3758
https://doi.org/10.2514/6.1998-3758
Autor:
L.-D. Chen, Jyh-Cherng Sheu
Publikováno v:
32nd Joint Propulsion Conference and Exhibit.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ad4916365f2fc6ce6a76d077b0ed30c
https://doi.org/10.2514/6.1996-3091
https://doi.org/10.2514/6.1996-3091
Autor:
Chang-Yun Chang, Tsung-Lin Lee, Wann, C., Li-Shyue Lai, Hung-Ming Chen, Chih-Chieh Yeh, Chih-Sheng Chang, Chia-Cheng Ho, Jyh-Cherng Sheu, Tsz-Mei Kwok, Feng Yuan, Shao-Ming Yu, Chia-Feng Hu, Jeng-Jung Shen, Yi-Hsuan Liu, Chen-Ping Chen, Shin-Chih Chen, Li-Shiun Chen, Chen, L., Yuan-Hung Chiu
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM); 2009, p1-4, 4p