Výsledky vyhledávání - "Jyh Rong Gong"

Influence of N2O/TEGa Ratio on Deposition of β-Ga2O3 Films and Performance of Au-β-Ga2O3-Au Solar-Blind Photodetectors

Autor: Tai-Yuan Lin, Chun-Ying Huang, Guan-Yu Lin, Feng-Hsuan Hsu, Cheng-Ping Chou, Zi-Ling Huang, Jyh-Rong Gong, Pei-Te Lin, Yen-Yang Liu, Pei-Chun Liao, Yu-Hsiang Peng

Publikováno v: ECS Journal of Solid State Science and Technology. 10:057001

In this study, a series of β-Ga2O3 films are prepared by using triethylgallium (TEGa) and nitrous oxide (N2O) as precursors to explore the effect of N2O/TEGa ratio on the characteristics of β-Ga2O3 films. A metal/semiconductor/metal (MSM)-type sola

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96bbe2eef4636b4a7e8ee611afa30ead
https://doi.org/10.1149/2162-8777/abfa2b

Zobrazit plný text záznamu

On the response of gamma irradiation on atomic layer deposition-grown β-Ga2O3 films and Au-β-Ga2O3-Au deep ultraviolet solar-blind photodetectors

Autor: Guan-Yu Lin, Tai-Yuan Lin, Zi-Ling Huang, Jyh-Rong Gong, Feng-Hsuan Hsu, Fu-Yuan Chang, Yu-Hsiang Peng, Pei-Te Lin, Chun-Ying Huang, Yen-Yang Liu

Publikováno v: Journal of Vacuum Science & Technology A. 38:062409

β-Ga2O3 films are deposited on (0001) sapphire substrates using triethylgallium (TEGa) and nitrous oxide (N2O) under high N2O/TEGa ratios by atomic layer deposition (ALD). Au-β-Ga2O3-Au metal/semiconductor/metal (MSM) solar-blind deep ultraviolet (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1191acfee7d03e57e77ca7387409138b
https://doi.org/10.1116/6.0000512

Zobrazit plný text záznamu

Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition

Autor: Tzu-Pei Chen, Jyh-Rong Gong, Chien-Hua Chou, Tai-Yuan Lin, Chien-Hua Chiu, Kuo-Yi Yen, Chun-Wei Li, Chi-Ying Hsiao, Ko-Ying Lo, Chu-Hsien Lin

Publikováno v: Journal of Crystal Growth. 387:91-95

Ga-doped ZnO (GZO) and In-doped ZnO (IZO) films were prepared by atomic layer deposition (ALD), and the ALD-grown GZO (or IZO) films with (or without) N2 annealing were employed to serve as transparent conducting layers (TCLs) in InGaN/GaN (multiple

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b706369e7d4ccc3af13a7db215544e4
https://doi.org/10.1016/j.jcrysgro.2013.10.042

Zobrazit plný text záznamu

Performance of InGaN/GaN MQW LEDs Using Ga-Doped ZnO TCLs Prepared by ALD

Autor: Tzu-Pei Chen, Jyh-Rong Gong, Chien-Hua Chou, Kuo-Yi Yen, Chien-Hua Chiu, Chun-Wei Li, Tai-Yuan Lin, Pei-Shin Lin

Publikováno v: IEEE Photonics Technology Letters. 24:2105-2108

Heavily Ga-doped ZnO (n±-GZO) films prepared by atomic layer deposition were used as transparent conducting layers (TCLs) on InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs). It was found that N2-annealed n+-GZO-coated InGaN/GaN MQ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3f157c6a1a5bee447f82f744096124e5
https://doi.org/10.1109/lpt.2012.2220537

Zobrazit plný text záznamu

Properties of Cu2ZnSnS4Films by Sulfurization of CuS-SnS-ZnS Precursors Using Ditert-butylsulfide at Atmospheric Pressure

Autor: Jyh-Rong Gong, Tzu-Pei Chen, Ho-Ching Ni, Chu-Hsien Lin, Cheng-Hsiu Tsai, Ko-Ying Lo, Jai-Lin Tsai

Publikováno v: ECS Journal of Solid State Science and Technology. 4:Q72-Q74

Cu2ZnSnS4 (CZTS)films were prepared by sulfurization of chemical bath deposited (CBD) CuS-ZnS-SnS precursors at atmospheric pressure using ditert-butylsulfide (DTBS). The characteristics of DTBS-sulfurized CZTSfilms were investigated by X-ray diffrac

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::259a640c800c97c5800a0eeca9e4463c
https://doi.org/10.1149/2.0091508jss

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání