Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Juyeab Lee"'
Autor:
Kyoung Jin Park, Se Hoon Kim, Hyun-Seung Yoo, Jung-Seok Oh, Keon-Soo Shim, Sung-Kye Park, Moon-Sik Seo, Kwang-Sun Jeon, Han-Soo Joo, Sang-Hyun Oh, Seokkiu Lee, Sung-Joo Hong, Yoon-Soo Jang, Gyu-Seog Cho, Sung-Wook Jung, Juyeab Lee, Sang-Bum Lee, Eun-Seok Choi
Publikováno v:
2013 5th IEEE International Memory Workshop.
The effects of three types of program (PGM) disturbance, which are X, XY, and Y mode, on the chip level erase (ERS) threshold voltage (VT) distribution in three-dimensional (3D) NAND Flash memory were studied. A simple model was constructed to emulat
Publikováno v:
Extended Abstracts of the 2012 International Conference on Solid State Devices and Materials.
Autor:
Suock Chung, J. H. Lee, W. S. Nam, Janice H. Nickel, Hyunsang Hwang, Junkyo Suh, Kee-jeung Lee, Kwang-Ok Kim, Y. K. Kim, R.S. Williams, Yong Soo Kim, K. M. Rho, Ho-Seok Lee, Hyejung Choi, Sung Kye Park, H. S. Shin, K. Cho, J. T. Cheong, S. N. Park, S. Chae, Juyeab Lee, Kwon Hong, Sook-Joo Kim, Jianhua Yang, Seoung-Ju Chung, Seung Hwan Lee, Hyung Dong Lee, H. G. Jeong, C. G. Lee, Y. S. Sohn, Hyeon-Koo Cho, E.-R. Hwang, Frederick A. Perner, Sung-Joo Hong, Jumsoo Kim
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
4F2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell are
Autor:
Jeong-Deog Koh, Seung-Ho Pyi, Han-Soo Joo, Seokkiu Lee, Ki-hong Lee, Hyun-Seung Yoo, Keon-Soo Shim, Juyeab Lee, Jinwoong Kim, Sang-Bum Lee, SangMoo Choi, Yoon-Soo Jang, Gyu-Seog Cho, Sung-Wook Jung, Sung-Kye Park, Eun-Seok Choi, Se Hoon Kim, Sang-Hyun Oh, Kwang-Sun Jeon, Sung-Joo Hong, Kyung-Jin Park, Jung-Seok Oh
Publikováno v:
2012 4th IEEE International Memory Workshop.
Program disturbance characteristics of 3D vertical NAND Flash cell array architecture have been investigated intensively. A new 'program Y disturbance' mode peculiar to 3D NAND Flash cell is defined. Swing characteristics of poly-Si channel and incre
A middle-1X nm NAND flash memory cell (M1X-NAND) with highly manufacturable integration technologies
Autor:
Jaejung Lee, Gyu-Seog Cho, Seokkiu Lee, Sung-Joo Hong, Ji-Hyun Seo, Sungwook Park, Kyoung-Hwan Park, Jongsoon Leem, Philsoon Jang, Heeyoul Lee, Sungkee Park, Juyeab Lee, Sung-Kye Park, Jinwoong Kim, Seokho Jeong, Heehyun Jang, Min-Sik Jang, Joowon Hwang, Hyungoo Kkang, Seunghwan Baik, Jumsoo Kim, Kyeongbock Lee, Tackseung Hong, Seiichi Aritome, Hye-Eun Heo, Young Bok Lee, Myung Shik Lee, Jaeseok Kim, Byung-Seok Lee
Publikováno v:
2011 International Electron Devices Meeting.
A middle-1x nm design rule multi-level NAND flash memory cell (M1X-NAND) has been successfully developed for the first time. 1) QSPT (Quad Spacer Patterning Technology) of ArF immersion lithography is used for patterning mid-1x nm rule wordline (WL).
Autor:
Y.-H. Seo, Sung-Woong Chung, G.-J. Park, J.-S. Rho, Hyun Mi Hwang, Adrian E. Ong, Ju-Rak Kim, Jung-Lae Park, Mun-Haeng Lee, Suk-Chul Kim, D.-H. Jung, K.-M. Rho, Vladimir Nikitin, Sung-Hyuk Cho, J.-G. Jeong, Sung-Hyung Park, Juyeab Lee, Suock Chung, H.-J. Suh, X. Tang, Dojin Kim, Y.-B. An, A. Driskill-Smith, Yong-ki Kim, Sang-Min Hwang, Jaeyun Yi, Sung-Buk Lee, Hong-Gi Kim, S. J. Hong, Gyu-An Jin
Publikováno v:
2010 International Electron Devices Meeting.
A compact STT(Spin-Transfer Torque)-RAM with a 14F2 cell was integrated using modified DRAM processes at the 54nm technology node. The basic switching performance (R-H and R-V) of the MTJs and current drivability of the access transistors were charac
Autor:
Sung-Kye Park, Jonghoon Oh, B. M. Seo, Byeongchan Choi, Juyeab Lee, Joo-Hwan Cho, Jong-sam Kim, Kwon Hong, Byung-Kook Kim
Publikováno v:
Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials.
Autor:
Joong-Seob Yang, S. Jung, Juyeab Lee, Kun-Ok Ahn, Myoung Kwan Cho, Sung-Kye Park, Yo-Hwan Koh, Ho-Seok Lee, Sang-Hoon Cho, K. Jin, Milim Park, J. An
Publikováno v:
Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials.
Autor:
Hyunyoung Shim, Seaung-Suk Lee, Byungkook Kim, Namjae Lee, Doyoung Kim, Hankyum Kim, Byungkeun Ahn, Youngho Hwang, Hoseok Lee, Jumsoo Kim, Youngbok Lee, Heeyoul Lee, Juyeab Lee, Seungho Chang, Joongseob Yang, Sungkye Park, Aritome, S., Seokkiu Lee, Kun-Ok Ahn, Gihyun Bae
Publikováno v:
2011 Symposium on VLSI Technology (VLSIT); 2011, p216-217, 2p