In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms.

Autor: Kong Boon Yeap, Gall, Martin, Zhongquan Liao, Sander, Christoph, Muehle, Uwe, Justison, Patrick, Aubel, Oliver, Hauschildt, Meike, Beyer, Armand, Vogel, Norman, Zschech, Ehrenfried

Publikováno v: Journal of Applied Physics; 2014, Vol. 115 Issue 12, p124101-1-124101-7, 7p, 1 Color Photograph, 3 Black and White Photographs, 1 Diagram, 3 Graphs

Wafer level high temperature reliability study by backside probing f or a 50um thin TSV wafer

Autor: C.S. Premachandran, Justison Patrick, P. Paliwoda, Thangaraju Sarasvathi, Rahul Agarwal, Natarajan Mahadeva Iyer, Gondal Arfa, Rakesh Ranjan, Yap Sing Fui

Publikováno v: 2015 IEEE 65th Electronic Components and Technology Conference (ECTC).

Wafer level reliability of TSV has been studied with respect to FEOL (Front end of line) and BEOL (Back end of line) reliability aspects. TSV keep out zone (KoZ) study has been done with varying gate length and width of transistor. Voltage ramp stres

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2440b83a554d2a5f1b88831de222b967
https://doi.org/10.1109/ectc.2015.7159899

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Method to Determine the Root Cause of Low- $\kappa$ SiCOH Dielectric Failure Distributions.

Autor: Ogden, Sean P., Yeap, Kong Boon, Shen, Tian, Justison, Patrick, Lu, Toh-Ming, Plawsky, Joel L.

Publikováno v: IEEE Electron Device Letters; Jan2017, Vol. 38 Issue 1, p119-122, 4p

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