Výsledky vyhledávání - "Justinas Jorudas"

Akademický článek

Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene

Autor: Justinas Jorudas, Daniil Pashnev, Irmantas Kašalynas, Ilja Ignatjev, Gediminas Niaura, Algirdas Selskis, Vladimir Astachov, Natalia Alexeeva

Publikováno v: Nanomaterials, Vol 12, Iss 22, p 4017 (2022)

To fabricate graphene-based high-frequency electronic and optoelectronic devices, there is a high demand for scalable low-contaminated graphene with high mobility. Graphene synthesized via chemical vapor deposition (CVD) on copper foil appears promis

Externí odkaz: https://doaj.org/article/5455e0777cb949c085b1a7db654e6401

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Akademický článek

Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

Autor: Emilis Šermukšnis, Justinas Jorudas, Artūr Šimukovič, Vitalij Kovalevskij, Irmantas Kašalynas

Publikováno v: Applied Sciences, Vol 12, Iss 21, p 11079 (2022)

In this work, we investigated the self-heating effects of annealed Ti/Al/Ni/Au ohmic contacts and two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures under strong electric field by using the short pulse current–voltage and microwave n

Externí odkaz: https://doaj.org/article/7a6682bd17244447b2d92e6e55699c7c

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Akademický článek

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate

Autor: Roman M. Balagula, Liudvikas Subačius, Justinas Jorudas, Vytautas Janonis, Pawel Prystawko, Mikolaj Grabowski, Irmantas Kašalynas

Publikováno v: Materials, Vol 15, Iss 6, p 2066 (2022)

The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from

Externí odkaz: https://doaj.org/article/6f3b08c363ac4caeb9fb94252c19199f

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Akademický článek

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures

Autor: Justinas Jorudas, Paweł Prystawko, Artūr Šimukovič, Ramūnas Aleksiejūnas, Jūras Mickevičius, Marcin Kryśko, Paweł Piotr Michałowski, Irmantas Kašalynas

Publikováno v: Materials, Vol 15, Iss 3, p 1118 (2022)

A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, mo

Externí odkaz: https://doaj.org/article/7f306e5799b74dddb7626d020b0010b4

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Akademický článek

Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate

Autor: Roman B. Adamov, Daniil Pashnev, Vadim A. Shalygin, Maria D. Moldavskaya, Maxim Ya. Vinnichenko, Vytautas Janonis, Justinas Jorudas, Saulius Tumėnas, Paweł Prystawko, Marcin Krysko, Maciej Sakowicz, Irmantas Kašalynas

Publikováno v: Applied Sciences, Vol 11, Iss 13, p 6053 (2021)

Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructu

Externí odkaz: https://doaj.org/article/64ac112ad0bd49d2b0e4940c6e17e821

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Akademický článek

Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside

Autor: Simonas Indrišiūnas, Evaldas Svirplys, Justinas Jorudas, Irmantas Kašalynas

Publikováno v: Micromachines, Vol 12, Iss 4, p 407 (2021)

Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent

Externí odkaz: https://doaj.org/article/e52d971ab5574c47a744f617f33e7374

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Akademický článek

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics

Autor: Justinas Jorudas, Artūr Šimukovič, Maksym Dub, Maciej Sakowicz, Paweł Prystawko, Simonas Indrišiūnas, Vitalij Kovalevskij, Sergey Rumyantsev, Wojciech Knap, Irmantas Kašalynas

Publikováno v: Micromachines, Vol 11, Iss 12, p 1131 (2020)

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to i

Externí odkaz: https://doaj.org/article/6ec2e3a2a5904a008f738fa7924af970

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