Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Justin Parke"'
Publikováno v:
Semiconductor Science and Technology.
Multichannel RF power amplifiers offer high frequency operation, high current and RF power, combined with excellent linearity. 3D and 2D simulation is used to investigate how changes in device architecture impact both the linearity and off-state reli
Autor:
Akhil S. Kumar, Michael J. Uren, Matthew D. Smith, Martin Kuball, Justin Parke, H. George Henry, Robert S. Howell
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Autor:
Ken Nagamatsu, Josephine B. Chang, Martin Kuball, Stefano Dalcanale, Michael J. Uren, Justin Parke, Robert S. Howell
Publikováno v:
IEEE Transactions on Electron Devices. 68:2220-2225
We report a novel noise analysis for the leakage current during time-dependent dielectric degradation under bias stress, illustrated using AlGaN/GaN superlattice castellated field-effect transistors (SLCFETs). Gate step stress is a standard approach
Autor:
Jerome T. Mlack, Nick Edwards, Brian Novak, Annaliese Drechsler, Jordan Merkel, Timothy Vasen, Daniel J. Hannan, Paul Brabant, Ishan Wathuthanthri, Justin Parke, Sam Wanis, Robert S. Howell, Ken A. Nagamatsu
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Autor:
Mark Yu, Justin Parke, Brian Novak, Ken Nagamatsu, Robert S. Howell, Sourabh Khandelwal, Jordan Merkel, Patrick B. Shea
Publikováno v:
BCICTS
Accurate compact model for simulating radiofrequency (RF) switch characteristics of a Super Lattice Castellated Field Effect Transistor (SLCFET) is presented. The new model is developed by modifying the industry standard ASM-HEMT compact model formul
Publikováno v:
2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
High power RF switches were designed in the Super-Lattice Castellated Field Effect Transistor (SLCFET) 3S process. The design goals were low ON-state insertion loss (0.25 dB for UHF-band, 1 dB for S-band), high OFF-state isolation from the RF input (
Autor:
Robert S. Howell, Michael J. Uren, Justin Parke, Shalini Gupta, James W Pomeroy, Ken Nagamatsu, Stefano Dalcanale, Josephine B. Chang, Sarat Saluru, Callum Middleton, Martin Kuball, Ishan Wathuthanthri
Publikováno v:
Middleton, C, Dalcanale, S, Uren, M, Pomeroy, J, Uren, M J, Chang, J, Parke, J, Wathuthanthri, I, Nagamatsu, K, Salaru, S & Kuball, M 2019, ' Thermal transport in Superlattice Castellated Field Effect Transistors ', IEEE Electron Device Letters, vol. 40, no. 9, pp. 1374-1377 . https://doi.org/10.1109/LED.2019.2929424
Heat extraction from novel GaN/AlGaN superlattice castellated field effect transistors developed as an RF switch is studied. The device thermal resistance was determined as 19.1 ± 0.7 K/(W/mm) from a combination of Raman thermographymeasurements, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a6c44c20c8e9b707902269301b1475a7
https://research-information.bris.ac.uk/ws/files/204211531/Thermal_Transport_in_Superlattice_Castellated_Field_Effect_Transistors.pdf
https://research-information.bris.ac.uk/ws/files/204211531/Thermal_Transport_in_Superlattice_Castellated_Field_Effect_Transistors.pdf
Publikováno v:
Microelectronics Reliability. 55:2516-2521
A root cause failure investigation was performed on anomalous (early) MIM capacitor failures on an HBT MMIC process. These failures were only observed on capacitors in the actual MMICs; process control monitor (PCM) capacitors were nominal. Multiple
Autor:
Robert S. Howell, Karen Renaldo, Shalini Gupta, Justin Parke, Bettina Nechay, Ishan Wathuthanthri, Pavel Borodulin, Megan Snook, Ron Freitag, H. George Henry, Matt King, Eric J. Stewart, Matt Torpey
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
FET-based switched filters do not occupy a large space in the literature due to the high loss of the switches relative to other technologies. The Super-Lattice Castellated Field Effect Transistor (SLCFET) is a low loss, high isolation, broadband RF s
Autor:
H. George Henry, Shalini Gupta, Matthew R. King, Ishan Wathuthanthri, Ron Freitag, Parrish Ralston, Eric J. Stewart, Megan Snook, Robert S. Howell, Justin Parke, Bettina Nechay
Publikováno v:
2016 IEEE MTT-S International Microwave Symposium (IMS).
The Super-Lattice Castellated Field Effect Transistor (SLCFET) uses a super-lattice in the channel region to form multiple parallel current paths in conjunction with castellations etched into that super-lattice to provide a sidewall gate structure. T