Zobrazeno 1 - 10
of 494
pro vyhledávání: '"Justin D. Holmes"'
Autor:
Hugh G. Manning, Fabio Niosi, Claudia Gomes da Rocha, Allen T. Bellew, Colin O’Callaghan, Subhajit Biswas, Patrick F. Flowers, Benjamin J. Wiley, Justin D. Holmes, Mauro S. Ferreira, John J. Boland
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-9 (2018)
Nanowire networks with memristive properties are promising for neuromorphic applications. Here, the authors observe the formation of a preferred conduction pathway which uses the lowest possible energy to get through the network and could be exploite
Externí odkaz:
https://doaj.org/article/773370e15962429d9dd7b1a739f7787e
Autor:
Noel Kennedy, Ray Duffy, Luke Eaton, Dan O’Connell, Scott Monaghan, Shane Garvey, James Connolly, Chris Hatem, Justin D. Holmes, Brenda Long
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 2106-2113 (2018)
This paper details the application of phosphorus monolayer doping of silicon on insulator substrates. There have been no previous publications dedicated to the topic of MLD on SOI, which allows for the impact of reduced substrate dimensions to be pro
Externí odkaz:
https://doaj.org/article/c7758da9c4044545a54d90af027e4eb4
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-11 (2018)
Abstract In an effort to develop block copolymer lithography to create high aspect vertical pore arrangements in a substrate surface we have used a microphase separated poly(ethylene oxide) -b- polystyrene (PEO-b-PS) block copolymer (BCP) thin film w
Externí odkaz:
https://doaj.org/article/b7e872b03ece47e6858dfcf8de65c980
A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 2002 (2021)
Ge nanowires are playing a big role in the development of new functional microelectronic modules, such as gate-all-around field-effect transistor devices, on-chip lasers and photodetectors. The widely used three-phase bottom-up growth method utilisin
Externí odkaz:
https://doaj.org/article/bb7157fa3fde4284961d55eae5d87ac1
Autor:
John O’Connell, Enrico Napolitani, Giuliana Impellizzeri, Colm Glynn, Gerard P. McGlacken, Colm O’Dwyer, Ray Duffy, Justin D. Holmes
Publikováno v:
ACS Omega, Vol 2, Iss 5, Pp 1750-1759 (2017)
Externí odkaz:
https://doaj.org/article/5b877403b1e5486d94de4f7c2d2a1878
Autor:
Ievgen Nedrygailov, Kamil Rahme, Scott Monaghan, Subhajit Biswas, Paul Hurley, Justin D. Holmes
The rapid increase in the temperature of the Earth's atmosphere, caused by man-made factors, is one of the most serious threats of our time. The most important measure to mitigate this threat is to reduce carbon emissions through an energy transition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::359f0135030e09f77b4b496a0d58e571
Publikováno v:
Nanomaterials, Vol 11, Iss 3, p 669 (2021)
Nanopatterns can readily be formed by annealing block copolymers (BCPs) in organic solvents at moderate or high temperatures. However, this approach can be challenging from an environmental and industrial point of view. Herein, we describe a simple a
Externí odkaz:
https://doaj.org/article/4aae0bc7442044b8abf229f848a19d76
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1574-1578 (2016)
We studied the electrical transport properties of Au-seeded germanium nanowires with radii ranging from 11 to 80 nm at ambient conditions. We found a non-trivial dependence of the electrical conductivity, mobility and carrier density on the radius si
Externí odkaz:
https://doaj.org/article/6cb0e640db92436ea4ff6dfd2fccb107
Autor:
Stephen Connaughton, Maria Koleśnik-Gray, Richard Hobbs, Olan Lotty, Justin D. Holmes, Vojislav Krstić
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 7, Iss 1, Pp 1284-1288 (2016)
The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrea
Externí odkaz:
https://doaj.org/article/f81579e937b14caf896d792dcd023003
Autor:
Subhajit Biswas, Jessica Doherty, Dzianis Saladukha, Quentin Ramasse, Dipanwita Majumdar, Moneesh Upmanyu, Achintya Singha, Tomasz Ochalski, Michael A. Morris, Justin D. Holmes
Publikováno v:
Nature Communications, Vol 7, Iss 1, Pp 1-12 (2016)
Direct band gap nanostructures compatible with Si-based electronics are actively investigated. Here, Biswas et al. incorporate unusually large amounts of tin in germanium nanowires by non-equilibrium kinetic trapping, and optical characterizations su
Externí odkaz:
https://doaj.org/article/5e60bb3adf1b4912ad37a844fb038f4b