Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Justin C. Hackley"'
Autor:
Justin C. Hackley, Theodosia Gougousi
Publikováno v:
Thin Solid Films. 517:6576-6583
article i nfo Article history: The growth, composition and morphology of HfO2 films that have been deposited by atomic layer deposition (ALD) are examined in this article. The films are deposited using two different ALD chemistries: i) tetrakis ethyl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ab8d11d7ef3913a0b5dc5ec0f3aca1d
https://doi.org/10.1016/j.tsf.2009.04.033
https://doi.org/10.1016/j.tsf.2009.04.033
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 26:1235-1240
HfO2 thin films have been deposited by an atomic layer deposition (ALD) process using alternating pulses of tetrakis(dimethyl)amino hafnium and H2O precursors at a substrate temperature of 200–325°C. The initial stage of film growth on OH- and H-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d7d3e3e1f72ceea6f63bf9a35c9d1d4
https://doi.org/10.1116/1.2965813
https://doi.org/10.1116/1.2965813
Publikováno v:
MRS Proceedings. 1155
Atomic Layer Deposition is used to deposit HfO2 and TiO2 films on GaAs (100) native oxides and etched surfaces. For the deposition of HfO2 films two different but similar ALD chemistries are used: i) tetrakis dimethyl amido hafnium (TDMAHf) and H2O a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d7610f22a2ace93f27e602d1f52b71
https://doi.org/10.1557/proc-1155-c10-03
https://doi.org/10.1557/proc-1155-c10-03
Publikováno v:
MRS Proceedings. 1073
The atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethylamido)hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49aa64f381788b805531f0e6ed36a652
https://doi.org/10.1557/proc-1073-h04-19
https://doi.org/10.1557/proc-1073-h04-19
Publikováno v:
MRS Proceedings. 996
A hot wall Atomic Layer Deposition (ALD) flow reactor equipped with a Quartz Crystal Microbalance (QCM) has been used for the deposition of HfO2 thin films with tetrakis (dimethylamino) hafnium (TDMAH) and H2O as precursors. HfO2 films were deposited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4dab0808f3c2ac06eb14984feb0a7dae
https://doi.org/10.1557/proc-0996-h03-09
https://doi.org/10.1557/proc-0996-h03-09
Publikováno v:
Journal of The Electrochemical Society. 157:H551
The initial film growth 2–100 cycles and the interface evolution of HfO2 thin films on GaAs surfaces were investigated for an atomic layer deposition chemistry that utilizes tetrakis ethylmethyl amino hafnium and H2O at 250°C. Starting surfaces in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51a7aeb0fe810759dd9c6b7e0e47804c
https://doi.org/10.1149/1.3353166
https://doi.org/10.1149/1.3353166
Publikováno v:
Applied Physics Letters. 92:162902
HfO2 films have been deposited by using a tetrakis(dimethylamino)hafnium/H2O atomic layer deposition (ALD) process on GaAs. X-ray photoelectron spectroscopy measurements show that the HF and NH4OH predeposition surface treatment results in efficient
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2648f8f68b863917004dab102c6a95ee
https://doi.org/10.1063/1.2908223
https://doi.org/10.1063/1.2908223