Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Just Hilgarth"'
Autor:
Daniel Chrastina, Ravin Ginige, Just Hilgarth, Mircea Modreanu, Brian Corbett, H. von Känel, Giovanni Isella, C Barrett
A virtual substrate consisting of a Ge layer grown directly on Si without an intervening SiGe graded layer is characterized. The nominally 100% Ge overlayer is fully relaxed and contains a small amount (3%) of unintentional Si. A dislocation density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc4fe1ea24047f50ba9567d31f26bab8
http://hdl.handle.net/11311/553592
http://hdl.handle.net/11311/553592
Autor:
Ian Ballard, Just Hilgarth, Graham Clarke, Paul Abbott, Brian Corbett, Massimo Mazzer, Keith W. J. Barnham, Ravin Ginige
Publikováno v:
ResearcherID
We have processed and characterised front (P‐Grid) and back (N‐Grid) illuminated strain balanced multi‐quantum well InGaAs/InP thermophotovoltaic cells with a bandedge at 1980nm. We find that the inverted cells (N‐Grid) dark currents are comp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd5313fb3152be23ea54b49e06c18990
https://doi.org/10.1063/1.1841926
https://doi.org/10.1063/1.1841926
Publikováno v:
AIP Conference Proceedings.
We report on the design, fabrication and evaluation of InGaAs/InP TPV cells. The fabrication process was developed for single wafer laboratory processing of lattice matched In0.53Ga0.47As cells and subsequently adapted for batch processing in industr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a706f25b67070f56ce49b310ec8143fd
https://doi.org/10.1063/1.1539390
https://doi.org/10.1063/1.1539390
Autor:
Benoit Lambert, Ravin Ginige, Brian Corbett, Donagh O'Mahony, Pleun Maaskant, Just Hilgarth, Walter Zimmerman, Sinje Steffen, Liam Lewis
Publikováno v:
Semiconductor Science and Technology. 24:125008
Schottky diodes have been fabricated using low-resistivity n-type free-standing GaN substrates with a reduced defect density lowly doped n-type epi-layer and an Ni/Ti/Pt/Au Schottky contact metalization. A thermionic field emission current transport
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::469853000e02cf56b2068b697166cbff
https://doi.org/10.1088/0268-1242/24/12/125008
https://doi.org/10.1088/0268-1242/24/12/125008