Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Jusong Wang"'
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 13:1324-1331
Using a modified, O2-enhanced nonselective wet thermal oxidation process, deep-etched ridge waveguides in AlGaAs heterostructures containing lambda = 808 nm InAlGaAs single quantum well or aluminum-free lambda = 1.3 mum GaAsP/InGaAsN dilute nitride m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b56206d280a28947a3c6a731dc65a2
https://doi.org/10.1109/jstqe.2007.905097
https://doi.org/10.1109/jstqe.2007.905097
Publikováno v:
IEEE Photonics Technology Letters. 19:598-600
AlGaAs heterostructure high-index-contrast (HIC) ridge waveguide (RWG) diode lasers incorporating a folded-cavity single-facet resonator with a folding bend radius as small as r=10 mum are demonstrated. Fabricated by a self-aligned deep dry etch (thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a2781db05a42edaea4e85afdfa84a12
https://doi.org/10.1109/lpt.2007.893907
https://doi.org/10.1109/lpt.2007.893907
Publikováno v:
2012 IEEE 38th Photovoltaic Specialists Conference (PVSC) PART 2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e647e3ea5a8a5a5975995ac6b8104e34
https://doi.org/10.1109/pvsc-vol2.2012.6656791
https://doi.org/10.1109/pvsc-vol2.2012.6656791
Autor:
Wei, Chen, Lijun, Wn, Zhihan, Yan, Jusong, Wang, Yalan, Fu, Xiongfei, Chen, Kun, Liu, Zhipeng, Wu
Publikováno v:
Sheng wu yi xue gong cheng xue za zhi = Journal of biomedical engineering = Shengwu yixue gongchengxue zazhi. 28(5)
This paper is to establish a three-dimensional finite element model (3D-FEM) of pelvic floor levator ani muscles in an old healthy women. We acquired the image data of the pelvic bones and pelvic floor muscles from CT and MRI scanning in a non-pregna
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d1cd45e63113279bf090ae8428900e71
https://pubmed.ncbi.nlm.nih.gov/22097257
https://pubmed.ncbi.nlm.nih.gov/22097257
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
A novel ion beam-induced cleaving process for slicing c-Si wafers ranging in thickness from 20µm to 150µm with near zero kerf-loss and markedly low overall cost has been developed and demonstrated to be capable of large-area thin PV substrate manuf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7de1d58e3f627ddda8096fe024e0be6
https://doi.org/10.1109/pvsc.2009.5411435
https://doi.org/10.1109/pvsc.2009.5411435
Publikováno v:
SPIE Proceedings.
The use of the non-selective, O 2 -enhanced wet thermal oxidation of deep-etched sidewalls in GaAs-based heterostructures has enabled the fabrication of low-loss, high-index-contrast ridge waveguides suitable for ring resonator laser devices. In a se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2e576a0ee407e0407efa9c572736e1
https://doi.org/10.1117/12.807871
https://doi.org/10.1117/12.807871
Publikováno v:
2007 65th Annual Device Research Conference.
In this paper, a native-oxide-confined HIC structure enabled by non-selective wet thermal oxidation, we have fabricated InAs QD LDs with improved performance (>40% decrease in threshold current density (Jth) and >40% increase in quantum efficiency (e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d3a97980569dd3b3241cdfe0e950bae
https://doi.org/10.1109/drc.2007.4373681
https://doi.org/10.1109/drc.2007.4373681
Publikováno v:
SPIE Proceedings.
A nonselective wet thermal oxidation technique for AlGaAs-containing heterostructures has been shown to enable the fabrication of a variety of novel high-efficiency, high-power GaAs-based in-plane laser devices. Applied in conjunction with a deep ani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::326b6a362e285c22a9da1326685d9932
https://doi.org/10.1117/12.701648
https://doi.org/10.1117/12.701648
Publikováno v:
SPIE Proceedings.
AHS1KAL;! A simple, novel self-aligned deep etch plus wet thermal oxidization process is demonstrated which enables high-index-contrast (HIC) ridge waveguide (RWG) lasers fabricated in a high-efficiency, high-power AlGaAs/InAlGaAs/GaAs graded-index s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c23b4c5af0073347311962e41ae9493
https://doi.org/10.1117/12.647124
https://doi.org/10.1117/12.647124
Publikováno v:
2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest..
Utilizing the high index contrast of a deep-etched, non-selectively oxidized AlGaAs/InAlGaAs GRINSCH heterostructure, half-racetrack-ring resonator lasers with peak output powers of 239 mW for a r=25 mum bend radius, and 40 mW for r=8 mum, are demons
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::953773d6693e2884b3a4d9a21fbc13bc
https://doi.org/10.1109/islc.2006.1708080
https://doi.org/10.1109/islc.2006.1708080