Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Jushan Xie"'
Publikováno v:
IRPS
Transistor level reliability analysis has been available for many years. However, recently new challenges have emerged as FinFET technology has been adopted to maintain process scaling. The reliability models used for planar CMOS transistors no longe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89c4b10c3e59a0af4454c8f8cfac4b53
https://doi.org/10.1109/irps.2019.8720540
https://doi.org/10.1109/irps.2019.8720540
Autor:
Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang
Publikováno v:
2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77316874696145c124b348d553c7f195
https://doi.org/10.1109/iccad.2017.8203856
https://doi.org/10.1109/iccad.2017.8203856
Autor:
Aixi Zhang, Guo Tianlei, Jushan Xie, Alvin I. Chen, Chunyi Huang, Ru Huang, Runsheng Wang, Shaofeng Guo
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
The reliability variation simulation methodology for advanced integrated circuit (IC) design is presented from an Electronic Design Automation (EDA) perspective. Reliability effects, such as hot carrier injection (HCI) and bias temperature instabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea1c4f9a97a4b3880f03c12a9679a69c
https://doi.org/10.1109/iedm.2015.7409677
https://doi.org/10.1109/iedm.2015.7409677
Publikováno v:
Physical Review B. 55:8194-8200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::947c4455d04682532aa86ff0572e15e2
https://doi.org/10.1103/physrevb.55.8194
https://doi.org/10.1103/physrevb.55.8194
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17:3085
A mathematical model of focused ion-beam milling is used to generate dwell times for the vector scanned pixel address scheme of a focused ion-beam deflection system. The model incorporates the absolute sputter yield of the solid as a function of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef159184ad012efd0b9503fa448d982d
https://doi.org/10.1116/1.590959
https://doi.org/10.1116/1.590959
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:2499
Focused ion beams (FIBs) have found a place in several research thrusts for the manufacture of mini or micro mechanical objects. This article reports the use of FIB in three distinct applications in microfabrication: prototype structures, micron-size
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d04cd437be37766922fa522cb81eb41
https://doi.org/10.1116/1.590198
https://doi.org/10.1116/1.590198