Raman Thermometry Characterization of GeSbTe based Phase Change Materials

Autor: Akash Patil, Yannick Le-Friec, Jury Sandrini, Roberto Simola, Philippe Boivin, Emmanuel Dubois, Jean-Francois Robillard

Publikováno v: 2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2022)
28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC 2022), Sep 2022, Dublin, Ireland. pp.1-5, ⟨10.1109/THERMINIC57263.2022.9950662⟩
2022 28th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Sep 2022, Dublin, Ireland. pp.1-5, ⟨10.1109/THERMINIC57263.2022.9950662⟩

International audience; Ge-rich GeSbTe N-doped alloys present a solution for the reliability and thermal stability requirements of Phase Change Memories for embedded non-volatile memory automotive applications. The thermal performance of these memori

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ad8bd6e2751e381ded48447c9aacb58
https://hal.science/hal-03870575/file/Therminic_article_final.pdf

Analog Control of Retainable Resistance Multistates in HfO2 Resistive-Switching Random Access Memories (ReRAMs)

Autor: Yusuf Leblebici, Carlo Ricciardi, Jury Sandrini, Elmira Shahrabi, Oguz Tolga Celik, Cecilia Giovinazzo

Publikováno v: ACS Applied Electronic Materials. 1:900-909

Resistive-switching random access memory (ReRAM) technologies are nowadays a good candidate to overcome the bottleneck of Von Neumann architectures, taking advantage of their logic-in-memory capability and the ability to mimic biological synapse beha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31e0a24ab4c9a3edba0978ce8af19eff
https://doi.org/10.1021/acsaelm.9b00094

Co-Design of ReRAM Passive Crossbar Arrays Integrated in 180 nm CMOS Technology

Autor: Jury Sandrini, Maxime Thammasack, Michele De Marchi, Pierre-Emmanuel Gaillardon, Tugba Demirci, Yusuf Leblebici, Marios Barlas, Giovanni De Micheli, Davide Sacchetto

Publikováno v: IEEE Journal on Emerging and Selected Topics in Circuits and Systems. 6:339-351

This work presents the co-integration of resistive random access memory crossbars within a 180 nm Read-Write CMOS chip. $ {\rm TaO}_{ {\rm x}}$ -based ReRAMs have been fabricated and characterized with materials and process steps compatible with the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dffd4738db9d779cb3b03fae681618a3
https://doi.org/10.1109/jetcas.2016.2547746

Effect of metal buffer layer and thermal annealing on HfOx-based ReRAMs

Autor: Behnoush Attarimashalkoubeh, Elmira Shahrabi, Jury Sandrini, Igor Krawczuk, Yusuf Leblebici

Publikováno v: 2016 IEEE International Conference on the Science of Electrical Engineering (ICSEE).

In this paper, we investigate different methods and approaches in order to improve the electrical characteristics of Pt/HfO x /TiN ReRAM devices. We discuss the improvement of the ReRAM electrical characteristics after the insertion of a Hf and Ti bu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d1d202b904fab6fcc64544947292b7ad
https://doi.org/10.1109/icsee.2016.7806101

Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology

Autor: Tugba Demirci, Yusuf Leblebici, Jury Sandrini, Maxime Thammasack, Davide Sacchetto

Publikováno v: ISCAS

This paper presents a read-write design solution for passive ReRAM crossbar memory arrays to overcome the sneak current paths problem. The proposed circuitry includes an auto-calibration feature to overcome the sneak current effects during the READ o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c5f78e104c4ba1f9b57d9880d1c5978
https://doi.org/10.1109/iscas.2015.7168557