Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Jury O. Lichmanov"'
Publikováno v:
Thin Solid Films. 257:134-136
The current-voltage characteristics of a defect metal-oxide-semiconductor, (MOS) structure (e.g. after breakdown) can be explained by electron transport through localized states formed by broken bonds. The density of states decreases exponentially be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d89dc7c16c7de8b0f89ee02115339d46
https://doi.org/10.1016/0040-6090(94)06338-9
https://doi.org/10.1016/0040-6090(94)06338-9
Publikováno v:
Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::956864e0d30d8474af6e8f7fa4785002
https://doi.org/10.7567/ssdm.1995.pc-1-10
https://doi.org/10.7567/ssdm.1995.pc-1-10