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Transport spectroscopy of a single dopant in a gated silicon nanowire

Autor: Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.

Publikováno v: Phys. Rev. Lett. 97, 206805 (2006)

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the

Externí odkaz: http://arxiv.org/abs/cond-mat/0608159

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Sub-threshold channels at the edges of nanoscale triple-gate silicon transistors

Autor: Sellier, H., Lansbergen, G. P., Caro, J., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S., Rogge, S.

Publikováno v: Appl. Phys. Lett. 90, 073502 (2007)

We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate

Externí odkaz: http://arxiv.org/abs/cond-mat/0603430

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