Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Juras Požela"'
Publikováno v:
Medžiagotyra, Vol 20, Iss 2, Pp 135-137 (2014)
The THz radiation reflection, absorption and emission spectra of conductive n-GaAs/air surface are considered. The influence of thermostimulated surface plasmon-phonon (SPP) polariton oscillations on THz radiation reflection, absorption and emission
Externí odkaz:
https://doaj.org/article/7541fb4096ff46e2afeae78b90343cfb
Publikováno v:
Lithuanian Journal of Physics. 53:163-167
Publikováno v:
Lithuanian Journal of Physics. 51:270-275
The possibilities of enhancing the electron mobility and high-field drift velocity in channels of modulation-doped InAlAs/InGaAs and AlGaAs/InGaAs quantum wells by tuning interaction of electrons with interface phonons are tested and reviewed. A larg
Publikováno v:
Lithuanian Journal of Physics. 50:397-402
The experimental field dependences of electron drift velocity in the Al0.3Ga0.7As/GaAs quantum well (QW) have no negative slope region and saturate at electric fields in the range of 5–10 kV/cm. The saturated drift velocity in the narrow (10 nm) QW
Publikováno v:
Lithuanian Journal of Physics. 45:445-451
Autor:
Juras Pozela
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and ex
Publikováno v:
physica status solidi c. 9:1696-1698
In polar semiconductors, the lattice dielectric function varies resonantly in the radiation frequency range ωT < ω < ωL, where ωT and ωL are the transverse and longitudinal optical phonon frequencies, respectively. The resonant reflectance spect
Publikováno v:
Materials Science Forum. :287-290
Fast graded-gap Al x Ga 1-x As/GaAs soft X-ray detector with sensitivity in the range of 10 3 -10 4 V/W was created. The delay time of photovoltage response in the p-Al x Ga 1-x As/n-GaAs detector is 50 ms, while photovoltage response in the p - -GaA
Publikováno v:
physica status solidi c. 4:632-634
New approaches to decrease the electron–polar optical (PO) phonon scattering rate in double heterostructures by using phonon barriers (reflective to PO phonons and transparent for electrons) are proposed. Twofold decrease of the electron–PO phono
Autor:
Juras Požela
Publikováno v:
Computer Physics Communications. 67:105-118
Monte Carlo simulation has been widely used to study charge-carrier transport in electric fields in GaAs, InP, Si and Ge at high frequencies. New physical ideas for solution of the problems important for solid-state devices for microwave and far-infr