Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Juraj Racko"'
Publikováno v:
Communications, Vol 12, Iss 2, Pp 5-9 (2010)
The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis. By comparing the current and capacitance measureme
Externí odkaz:
https://doaj.org/article/934494b011544d4f9e1d97dd923306f1
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 7, Iss 1 - 2, Pp 385-388 (2008)
The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers thr
Externí odkaz:
https://doaj.org/article/d320fc7fb5d5450b998d4338caa761b8
Autor:
Harmatha, Ladislav, Ľubica, Stuchlíková, Juraj, Racko, Juraj, Marek, Juraj, Pecháček, Peter, Benko, Michal, Nemec, Juraj, Breza
Publikováno v:
In Applied Surface Science 1 September 2014 312:102-106
Publikováno v:
Journal of Electrical Engineering. 71:31-36
The work presents a physical model of trap-assisted tunnelling that allows assessing the impact of traps upon the total current through metal/semiconductor heterostructures. The model is based on expressing the occupation probability of the trapping
Autor:
Ľubomír Vančo, Miroslav Mikolášek, Ján Greguš, Michal Hubeňák, Juraj Breza, Juraj Racko, Magdaléna Kadlečíková
Publikováno v:
Optik. 174:347-353
We have investigated the effect of the etching time on the Raman spectra of porous silicon prepared by anodic etching. Electrochemical destruction of the substrate increasing with the etching time and the correlation between the microstructure of the
Autor:
Juraj Racko, Filip Chymo, M. Tapajna, Vlastimil Rehacek, Karol Fröhlich, Miroslav Mikolášek, Kristína Hušeková, Ladislav Harmatha
Publikováno v:
Applied Surface Science. 461:48-53
This paper presents an electrical and photoelectrochemical comparison of MIS photoanodes with a metal organic chemical vapor deposited RuO2 layer and evaporated Ni layer to provide a deeper insight into the interface properties of such structures. Th
Publikováno v:
Applied Surface Science. 395:166-171
This paper presents an ASA simulation analysis of temperature dependent output parameters of the silicon heterojunction (SHJ) solar cell. The analysis has shown that low temperature behaviors of the open circuit voltage and fill factor are strongly c
Autor:
Miroslav Mikolášek, K. Jesenák, Juraj Breza, Alena Grmanová, Ľubomír Vančo, Magdaléna Kadlečíková, Juraj Racko
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019).
This experimental work is focused on the catalyst films – their chemical composition, preparation and catalytic activity (in terms of the amount of CNTs produced) in the process of synthesis of carbon nanotubes using hot filament chemical vapor dep
Autor:
Juraj Breza, Alena Grmanová, Ladislav Harmatha, Miroslav Mikolášek, Peter Benko, Magdaléna Kadlečíková, Juraj Racko
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019).
We demonstrate the effect of parallel and antiparallel orientations of spontaneous and piezoelectric polarizations upon the I-V characteristics of vertical metal/GaN/AlGaN/GaN heterostructures. Unlike in the generally accepted model considering paral
Autor:
Ivan Kundrata, Filip Chymo, Miroslav Mikolášek, Karol Fröhlich, Kristína Hušeková, Juraj Racko, Juraj Breza, Ladislav Harmatha
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019).
The results of capacitive and current voltage measurements on metal-insulator-semiconductor (MIS) photoanode structures with n-type silicon substrate are presented in this paper. The best photo-voltage and photo-current results were obtained on MIS s