Zobrazeno 1 - 10
of 327
pro vyhledávání: '"Junzo ISHIKAWA"'
Autor:
Junzo Ishikawa
Publikováno v:
Journal of the Vacuum Society of Japan. 60:35-39
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e204bdd93c941f3af81c1a165a476cf
https://doi.org/10.3131/jvsj2.60.35
https://doi.org/10.3131/jvsj2.60.35
Autor:
Junzo Ishikawa, Hiroko Sato, Hiroyuki Kojima, Yasuhito Gotoh, Hiroshi Tsuji, Piyanuch Sommani, Yuichiro Hayashi, Gikan H. Takaoka
Publikováno v:
Surface and Coatings Technology. 206:900-904
We have investigated a method for the patterning of cell adhesion on a silica glass by using two-steps of surface modification processes of CHF3 plasma treatment and negative-ion pattern implantation. For the first step, exposure of CHF3 plasma to si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a55a489bf4af0f79951333495321818a
https://doi.org/10.1016/j.surfcoat.2011.04.045
https://doi.org/10.1016/j.surfcoat.2011.04.045
Autor:
Hiroshi Tsuji, Junzo Ishikawa, Nobutoshi Arai, Masayuki Ohsaki, Masashi Hattori, Yasuhito Gotoh
Publikováno v:
Surface and Coatings Technology. 206:785-788
Photoluminescence properties (PL) and oxidation state of Ge atoms implanted into a thermally grown SiO2 layers have been investigated. The samples were prepared by Ge negative-ion implantation at multi-energies of 10–50 keV with various Ge concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47bdd35d2489fcf4654b93995ad76b48
https://doi.org/10.1016/j.surfcoat.2011.04.055
https://doi.org/10.1016/j.surfcoat.2011.04.055
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 645:153-158
Advanced implantation systems used for semiconductor processing require transportation of quasi-parallel ion beams, which have low energy ( 11 B + , 31 P + , 75 As + , E ion =200–1000 eV). Divergence of the ion beam due to space charge effects can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab98befa54f2867286338c8401769b11
https://doi.org/10.1016/j.nima.2010.12.169
https://doi.org/10.1016/j.nima.2010.12.169
Autor:
Junzo Ishikawa, Gikan H. Takaoka, Hiroko Sato, Hiroshi Tsuji, Piyanuch Sommani, Yasuhito Gotoh
Publikováno v:
Transactions of the Materials Research Society of Japan. 36:289-292
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b104f0f93bd2302a72a968d5942db35
https://doi.org/10.14723/tmrsj.36.289
https://doi.org/10.14723/tmrsj.36.289
Autor:
Gikan H. Takaoka, Piyanuch Sommani, Hiroshi Tsuji, Junzo Ishikawa, Hiroko Sato, Yasuhito Gotoh
Publikováno v:
Transactions of the Materials Research Society of Japan. 36:293-296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bcca3a7a77577f127da965046f9ad5e
https://doi.org/10.14723/tmrsj.36.293
https://doi.org/10.14723/tmrsj.36.293
Autor:
Gikan H. Takaoka, Junzo Ishikawa, Hiroko Sato, Yasuhito Gotoh, Hiroshi Tsuji, Hiroyuki Kojima, Piyanuch Sommani
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 268:3231-3234
We have investigated the irradiation effect of negative-ion implantation on the changes of physical surface property of polytetrafluoroethylene (PTFE) for controlling the adhesion property of stem cells. Carbon negative ions were implanted into PTFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fedf5c2df97823a74de6ea2e128deb3
https://doi.org/10.1016/j.nimb.2010.05.096
https://doi.org/10.1016/j.nimb.2010.05.096
Autor:
Nobutoshi Arai, Masatomi Harada, Masayuki Ohsaki, Toyotsugu Ishibashi, Hiroshi Tsuji, Junzo Ishikawa, Hiroshi Kotaki, Masashi Hattori, Yasuhito Gotoh, Tuyoshi Satoh
Publikováno v:
Transactions of the Materials Research Society of Japan. 35:773-776
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f10d97c6b26f356ba506fae04d1e44
https://doi.org/10.14723/tmrsj.35.773
https://doi.org/10.14723/tmrsj.35.773
Autor:
Masashi Hattori, Masayuki Ohsaki, Hiroshi Tsuji, Nobutoshi Arai, Hiroshi Kotaki, Yasuhito Gotoh, Junzo Ishikawa, Toyotsugu Ishibashi
Publikováno v:
Applied Surface Science. 256:954-957
We have investigated cathodeluminescence (CL) of Ge implanted SiO2:Ge and GeO2:Ge films. The GeO2 films were grown by oxidation of Ge substrate at 550 °C for 3 h in O2 gas flow. The GeO2 films on Ge substrate and SiO2 films on Si substrate were impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::010ec229d85466fa8ce764cd07a607e2
https://doi.org/10.1016/j.apsusc.2009.05.062
https://doi.org/10.1016/j.apsusc.2009.05.062
Publikováno v:
Surface and Coatings Technology. 203:2351-2356
We have developed a negative-ion implantation technique for surface modification of materials together with the development of high-intensity negative-ion sources and negative-ion implanters. In the negative-ion implantation, we have the advantage of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79d846e01d875c92582961f978084d0c
https://doi.org/10.1016/j.surfcoat.2009.02.023
https://doi.org/10.1016/j.surfcoat.2009.02.023