Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Junyeon, Kwon"'
Autor:
Young Ki Hong, Geonwook Yoo, Junyeon Kwon, Seongin Hong, Won Geun Song, Na Liu, Inturu Omkaram, Byungwook Yoo, Sanghyun Ju, Sunkook Kim, Min Suk Oh
Publikováno v:
AIP Advances, Vol 6, Iss 5, Pp 055026-055026-6 (2016)
Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for tra
Externí odkaz:
https://doaj.org/article/79df7228df6347128f3761c43726890a
Publikováno v:
Advanced Materials. 27:2224-2230
Local-gate multilayer MoS2 phototransistors exhibit a photoresponsivity of up to 342.6 A W(-1) , which is higher by 3 orders of magnitude than that of global-gate multilayer MoS2 phototransistors. These simulations indicate that the gate underlap is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca0bbf2e02b83d98842c1442bc11f417
https://doi.org/10.1002/adma.201404367
https://doi.org/10.1002/adma.201404367
Autor:
Sunkook, Kim, Jesse, Maassen, Jiyoul, Lee, Seung Min, Kim, Gyuchull, Han, Junyeon, Kwon, Seongin, Hong, Jozeph, Park, Na, Liu, Yun Chang, Park, Inturu, Omkaram, Jong-Soo, Rhyee, Young Ki, Hong, Youngki, Yoon
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 30(12)
Thin-film transistors (TFTs) based on multilayer molybdenum diselenide (MoSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a65b2570ea7f99b16ef6b9b20e332e89
https://pubmed.ncbi.nlm.nih.gov/29369423
https://pubmed.ncbi.nlm.nih.gov/29369423
Autor:
Hyuk-Jun Kwon, Woong Choi, Daeho Lee, Costas P. Grigoropoulos, Yun Sung Lee, Sunkook Kim, Byung-Wook Yoo, Junyeon Kwon
Publikováno v:
Nano Research. 7:1137-1145
We report the use of ultra-short, pulsed-laser annealed Ti/Au contacts to enhance the performance of multilayer MoS2 field effect transistors (FETs) on flexible plastic substrates without thermal damage. An analysis of the temperature distribution, b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39dbfa0cc3fdca4702ab466b751ac43f
https://doi.org/10.1007/s12274-014-0476-1
https://doi.org/10.1007/s12274-014-0476-1
Publikováno v:
Journal of the Korean Physical Society. 64:945-948
This paper reports the high-temperature-dependent electrical behavior of a 2D multilayer MoS2 transistor. The existence of a big Schottky barrier at the MoS2-Ti junction can reduce carrier transport and lead to a lower transistor conductance. At a hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7721faf54dacf54b83ceaa4e5e36303a
https://doi.org/10.3938/jkps.64.945
https://doi.org/10.3938/jkps.64.945
Autor:
Gyuchull Han, Seung Min Kim, Junyeon Kwon, I. Omkaram, Chulseung Jung, Yun Kyoung Hong, Jongjin Park, Youngbok Yoon, Hyunseong Moon, Sunkook Kim
Publikováno v:
SCIENTIFIC REPORTS(5)
Scientific Reports
Scientific Reports
Hexagonal molybdenum diselenide (MoSe2) multilayers were grown by chemical vapor deposition (CVD). A relatively high pressure (>760 Torr) was used during the CVD growth to achieve multilayers by creating multiple nuclei based on the two-dimensional c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba316aa77ee4e835549f98f47d87583a
Autor:
Junyeon Kwon, Muhammad A. Alam, Jozeph Park, I. Omkaram, Won Geun Song, Sunkook Kim, Jong-Soo Rhyee, Seung Min Kim, Piyush Dak, Young Ki Hong, Jin Hee Kim
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 28(12)
Large-area and highly crystalline CVD-grown multilayer MoSe2 films exhibit a well-defined crystal structure (2H phase) and large grains reaching several hundred micrometers. Multilayer MoSe2 transistors exhibit high mobility up to 121 cm(2) V(-1) s(-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec1ec600fd93210c5de0ed2daefda7d7
https://pubmed.ncbi.nlm.nih.gov/26755196
https://pubmed.ncbi.nlm.nih.gov/26755196
Autor:
Seongin Hong, Seung Min Kim, Jozeph Park, Yun Chang Park, Gyuchull Han, Youngki Yoon, Young Ki Hong, Jong-Soo Rhyee, Junyeon Kwon, Jiyoul Lee, Sunkook Kim, Jesse Maassen, I. Omkaram, Na Liu
Publikováno v:
Advanced Materials. 30:1705542
Thin-film transistors (TFTs) based on multilayer molybdenum diselenide (MoSe2 ) synthesized by modified atmospheric pressure chemical vapor deposition (APCVD) exhibit outstanding photoresponsivity (103.1 A W-1 ), while it is generally believed that o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e339183a9c2a7fa366144ea5a66ed9d6
https://doi.org/10.1002/adma.201705542
https://doi.org/10.1002/adma.201705542
Autor:
Junyeon, Kwon, Young Ki, Hong, Hyuk-Jun, Kwon, Yu Jin, Park, Byungwook, Yoo, Jiwan, Kim, Costas P, Grigoropoulos, Min Suk, Oh, Sunkook, Kim
Publikováno v:
Nanotechnology. 26(3)
We report on optically transparent thin film transistors (TFTs) fabricated using multilayered molybdenum disulfide (MoS2) as the active channel, indium tin oxide (ITO) for the back-gated electrode and indium zinc oxide (IZO) for the source/drain elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f4e88fe0c7f30af096b5ae6491fb67f4
https://pubmed.ncbi.nlm.nih.gov/25548952
https://pubmed.ncbi.nlm.nih.gov/25548952
Autor:
Seongin Hong, Ok Jin Kim, Gyuchull Han, Junyeon Kwon, Na Liu, Young Ki Hong, Dong Hak Kim, Inturu Omkaram, Youngki Yoon, Sunkook Kim
Publikováno v:
ECS Meeting Abstracts. :2318-2318
2D layered transition metal dichalcogenides (TMDs), especially MoS2, has received great attention for next-generation semiconductor devices because their thin film transistors (TFTs) show a nearly ideal subthreshold swing (SS ≈ 70 mV decade-1), hig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af2265c0526c4145617be13d950fbd98
https://doi.org/10.1149/ma2016-02/37/2318
https://doi.org/10.1149/ma2016-02/37/2318