Zobrazeno 1 - 10
of 35
pro vyhledávání: '"Junya Yaita"'
Autor:
Junji Kotani, Junya Yaita, Kenji Homma, Shirou Ozaki, Atsushi Yamada, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 101-106 (2023)
This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band. A high-drain current operation of 1.4 A/mm was realized by employing high-
Externí odkaz:
https://doaj.org/article/579d0f3250cb4141af3604f80d5ed5d0
Publikováno v:
IEEE Electron Device Letters. 42:1592-1595
To improve the electron mobility of quantum well (QW) gallium nitride (GaN) high electron mobility transistors (HEMT), we investigated QW and conventional AlGaN/GaN heterostructures grown by metal organic vapor phase epitaxy. Using calculation and ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaea50972d65f5d4d85af7aab70f7b15
https://doi.org/10.1109/led.2021.3116595
https://doi.org/10.1109/led.2021.3116595
Autor:
Takuya Murooka, Takayuki Iwasaki, Hiromitsu Kato, Masahiko Ogura, Junya Yaita, Satoshi Yamasaki, Toshiharu Makino, Mutsuko Hatano, Stephen E. Saddow, Meralys Natal
Publikováno v:
IEEE Transactions on Electron Devices. 67:212-216
We demonstrated and characterized Schottky barrier diodes (SBDs) fabricated on heteroepitaxial diamond films grown onto 3C-SiC/Si substrates. SBDs showed clear diode properties with rectification ratios above 109 at ±5 V and maintained above 108 eve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddfa7d54ce5cec88298398e5f7e9bd38
https://doi.org/10.1109/ted.2019.2952910
https://doi.org/10.1109/ted.2019.2952910
Publikováno v:
2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12c4cc7977733c0799a93df538767b76
https://doi.org/10.1109/imfedk53601.2021.9637617
https://doi.org/10.1109/imfedk53601.2021.9637617
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
GaN HEMTs are expected to achieve better device performance for microwave applications. The cellular automaton method is effective for predicting the transport characteristics of the two-dimensional electron gas, which is the key to the HEMT device p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85ef39dd8348f7a16a9995b42904433f
https://doi.org/10.1109/sispad54002.2021.9592574
https://doi.org/10.1109/sispad54002.2021.9592574
Publikováno v:
Japanese Journal of Applied Physics. 61:075505
We demonstrated high-electron-mobility transistors (HEMTs) with enhanced two-dimensional electron gas (2DEG) mobility using a low-strain AlGaN barrier grown by metalorganic vapor phase epitaxy under a nitrogen atmosphere. We investigated the effects
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09c0ec49898ced88484fa2272c0873fa
https://doi.org/10.35848/1347-4065/ac7624
https://doi.org/10.35848/1347-4065/ac7624
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::982eb706d2763d8e89b6b0e300239ff9
https://doi.org/10.7567/ssdm.2020.d-7-05
https://doi.org/10.7567/ssdm.2020.d-7-05
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Due to the innovation of microwave communication using GaN-based HEMT, further improvement of HEMT device performance is expected. Prediction of transport properties of 2D electron gas is indispensable for designing HEMT devices. Since electron energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0f347194c3b5d1b48af9b30db53b728
https://doi.org/10.23919/sispad49475.2020.9241683
https://doi.org/10.23919/sispad49475.2020.9241683
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1043
GaN-based high electron mobility transistors (HEMTs) are expected to have high performance in base station applications. Recently, it was reported that the combination of the Poisson–Schrödinger method and cellular automaton method is effective fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f454134f6f29b7414136eb5d79b867
https://doi.org/10.35848/1347-4065/ac420c
https://doi.org/10.35848/1347-4065/ac420c
Autor:
Shiro Ozaki, Junya Yaita, Atsushi Yamada, Yuichi Minoura, Toshihiro Ohki, Naoya Okamoto, Norikazu Nakamura, Junji Kotani
Publikováno v:
physica status solidi (a). 219:2100638
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb78df1d7abef250c1234f1ee9d89601
https://doi.org/10.1002/pssa.202100638
https://doi.org/10.1002/pssa.202100638