Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Junxue Ran"'
Autor:
Dongdong Liang, Bei Jiang, Zhetong Liu, Zhaolong Chen, Yaqi Gao, Shenyuan Yang, Rui He, Lulu Wang, Junxue Ran, Junxi Wang, Peng Gao, Jinmin Li, Zhongfan Liu, Jingyu Sun, Tongbo Wei
Publikováno v:
Advanced Science, Vol 11, Iss 20, Pp n/a-n/a (2024)
Abstract The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration of Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mism
Externí odkaz:
https://doaj.org/article/cc06096a042946aea09b96c7aeafa2e8
Autor:
Jiankun Yang, Yaqi Gao, Wei Zheng, Rui He, Ziqiang Huo, Xiaoli Ji, Junxue Ran, Ruifei Duan, Junxi Wang, Jinmin Li, Tongbo Wei
Publikováno v:
Crystal Growth & Design. 22:1731-1737
Autor:
Jie, Zhao, Yu, Yin, Renfeng, Chen, Xiang, Zhang, Junxue, Ran, Hao, Long, Junxi, Wang, Tongbo, Wei
Publikováno v:
Optics letters. 47(13)
In this Letter, we describe the fabrication of three dimensional (3D) truncated-hexagonal-pyramid (THP) vertical light emitting diodes (VLEDs) with white emission grown on β-Ga
Publikováno v:
Science Bulletin. 65:827-831
An accurate measurement of the refractive index is necessary for the optical design of both deep ultraviolet laser diodes and light-emitting diodes. Generally, the refractive indices along different crystallographic axes of anisotropic thin films are
Autor:
Renfeng Chen, Yu Yin, Lulu Wang, Yaqi Gao, Rui He, Junxue Ran, Junxi Wang, Jinmin Li, Tongbo Wei
Publikováno v:
Optics Letters. 47:6157
We have demonstrated piezo-phototronic enhanced modulation in green InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a microwire array (MWA) structure. It is found that an a-axis oriented MWA structure induces more c-axis compr
Publikováno v:
Semiconductor Science and Technology. 37:125001
In this letter, quasi-vertical Schottky barrier diodes (SBDs) based on AlN/Al0.6Ga0.4N heterostructure are fabricated and temperature-dependent current transport is systematically investigated. Benefited from the AlN/Al0.6Ga0.4N heterostructure with
Autor:
Junxue Ran, Rui He, Lulu Wang, Bingzhi Liu, Xiaoli Ji, Jingyu Sun, Junxi Wang, Jinmin Li, Tongbo Wei
Publikováno v:
Journal of Physics D: Applied Physics. 55:304001
Pt/Al0.75Ga0.25N Schottky barrier diodes (SBDs) with graphene (w/Gr) and without graphene (w/o Gr) interlayer between metal and semiconductor were fabricated to determine the effects of Gr interlayer on the device electrical characteristics. The temp
Publikováno v:
Optics letters. 45(7)
In this Letter, we describe an aperiodic-oscillation emission phenomenon originating from the Fabry–Perot effect in the deep-ultraviolet backscattering fluorescence spectrum of the c -plane AlGaN film, which is related to the dispersion of its ordi
Publikováno v:
ACS Nano. 12:425-431
Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing tradition
Publikováno v:
Journal of Applied Physics. 129:165701
For developing p-GaN gate-based enhancement-mode AlGaN/GaN high-electron-mobility transistors, the removal of the p-GaN layer around the gate region is demonstrated by photo-electrochemical etching. The etching behavior of p-GaN/AlGaN/GaN heterostruc