Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Juntae Jang"'
Autor:
Junseok Seo, Jin Hee Lee, Jinsu Pak, Kyungjune Cho, Jae‐Keun Kim, Jaeyoung Kim, Juntae Jang, Heebeom Ahn, Seong Chu Lim, Seungjun Chung, Keehoon Kang, Takhee Lee
Publikováno v:
Advanced Science, Vol 8, Iss 19, Pp n/a-n/a (2021)
Abstract Recently, there have been numerous studies on utilizing surface treatments or photosensitizing layers to improve photodetectors based on 2D materials. Meanwhile, avalanche breakdown phenomenon has provided an ultimate high‐gain route towar
Externí odkaz:
https://doaj.org/article/1911b165b6f24d5dadfcad553f905d9b
Publikováno v:
IEEE Transactions on Biomedical Circuits and Systems. 16:714-725
Unstable wireless power transmission toward multiple living animals in an animal cage is one of the significant barriers to performing long-term and real-time neural monitoring in preclinical research. Here, seamless capacitive body channel (SCB) wir
Autor:
Jaeyoung Kim, Kyungjune Cho, Jinsu Pak, Woocheol Lee, Junseok Seo, Jae-Keun Kim, Jiwon Shin, Juntae Jang, Kyeong-Yoon Baek, Jonghoon Lee, Seungjun Chung, Keehoon Kang, Takhee Lee
Publikováno v:
ACS Nano. 16:5376-5383
Autor:
Juntae Jang, Jae-Keun Kim, Jiwon Shin, Jaeyoung Kim, Kyeong-Yoon Baek, Jaehyoung Park, Seungmin Park, Young Duck Kim, Stuart S. P. Parkin, Keehoon Kang, Kyungjune Cho, Takhee Lee
Publikováno v:
Science Advances
Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c2144c3a17a5daf25bc125b7d7a02b1
https://hdl.handle.net/21.11116/0000-000B-79E0-021.11116/0000-000B-79DE-4
https://hdl.handle.net/21.11116/0000-000B-79E0-021.11116/0000-000B-79DE-4
Autor:
Juntae, Jang, Jae-Keun, Kim, Jiwon, Shin, Jaeyoung, Kim, Kyeong-Yoon, Baek, Jaehyoung, Park, Seungmin, Park, Young Duck, Kim, Stuart S P, Parkin, Keehoon, Kang, Kyungjune, Cho, Takhee, Lee
Publikováno v:
Science advances. 8(38)
Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements for future electronic and optoelectronic devices. Because doping o
Autor:
Seonhye Youn, Jeongmin Kim, Hongjae Moon, Jae‐Keun Kim, Juntae Jang, Joonyeon Chang, Takhee Lee, Keehoon Kang, Wooyoung Lee
Publikováno v:
Small
2D transition metal dichalcogenides (TMDCs) have revealed great promise for realizing electronics at the nanoscale. Despite significant interests that have emerged for their thermoelectric applications due to their predicted high thermoelectric figur
Autor:
Juntae Jang, Jae-Young Kim, Takhee Lee, Jae-Hyoung Park, Kyeong-Yoon Baek, Kyungjune Cho, WooCheol Lee, Jonghoon Lee, Jiwon Shin, Keehoon Kang
Publikováno v:
Nanotechnology. 33(6)
A hybrid organic–inorganic halide perovskite is a promising material for developing efficient solar cell devices, with potential applications in space science. In this study, we synthesized methylammonium lead iodide (MAPbI3) perovskites via two me
Autor:
Takhee Lee, Kyeong-Yoon Baek, Jehyun Kim, Jae-Keun Kim, Kyungjune Cho, Jae-Young Kim, Minwoo Song, Stuart S. P. Parkin, Keehoon Kang, Jung-Hoon Lee, Junseok Seo, Jiwon Shin, Juntae Jang
Publikováno v:
Advanced Materials
The controllability of carrier density and major carrier type of transition metal dichalcogenides(TMDCs) is critical for electronic and optoelectronic device applications. To utilize doping in TMDC devices, it is important to understand the role of d
Autor:
Hara Kang, In Byeong Kang, Soo Young Yoon, Juntae Jang, Jong Uk Bae, Ju Heyuck Baeck, Saeroonter Oh, Sung-Jin Choi, Dae Hwan Kim, Yong-Sung Kim, Sungju Choi, Kwon-Shik Park, Dong Myong Kim
Publikováno v:
SID Symposium Digest of Technical Papers. 48:298-301
Decomposition of the positive gate-bias temperature stress (PBTS)-induced instability into contributions of distinct mechanisms is experimentally demonstrated in top-gate self-aligned coplanar amorphous InGaZnO thin-film transistors and validated by
Autor:
Saeroonter Oh, Hara Kang, Soo Young Yoon, Juntae Jang, Dong Myong Kim, Yong-Sung Kim, Sungju Choi, In Byeong Kang, Dae Hwan Kim, Sung-Jin Choi, Kwon-Shik Park, Jong Uk Bae, Ju Heyuck Baeck
Publikováno v:
IEEE Electron Device Letters. 38:580-583
We propose an experimental method to decompose the positive gate-bias stress (PBS)-induced threshold voltage shift ( $\Delta {V}_{\mathsf {th}})$ of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) into the contributions of distinct degradatio