Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Junro SAKAI"'
Publikováno v:
Journal of the Physical Society of Japan. 64:1881-1884
Breakdown of the quantum Hall effect due to current has been measured in specially designed samples with width ranging from 3 to 60 µ m made from five different GaAs/AlGaAs heterostructure wafers at 0.5 K in magnetic fields B up to 6 T. Critical cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bf52cc3078e9b596c83f4b4eedb54dc
https://doi.org/10.1143/jpsj.64.1881
https://doi.org/10.1143/jpsj.64.1881
Publikováno v:
Journal of Crystal Growth. 127:484-488
We report the influence of a small quantity of Cl 2 , which enhanced the selectivity of silicon-selective epitaxial growth (Si-SEG) in UHV-CVD using Si 2 H 6 , on both the epitaxial growth rate and the B-doping properties for each Si and Si 1- x Ge x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ee4c883429e986bfdf23b70bcac6cb
https://doi.org/10.1016/0022-0248(93)90666-k
https://doi.org/10.1016/0022-0248(93)90666-k
Autor:
Junro Sakai
Publikováno v:
Journal of the Vacuum Society of Japan. 57:355-356
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fcdfcd7b291ebcb1032a5c6071964d5
https://doi.org/10.3131/jvsj2.57.355
https://doi.org/10.3131/jvsj2.57.355
Publikováno v:
Journal of Crystal Growth. 120:275-278
The conditions under which selective epitaxial growth (SEG) is achieved in UHV-CVD with Si2H6 are determined by the amount of Si2H6 molecules being supplied, and there is a critical gas supply amount (Fc) beyond which SEG will break down and lose its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eec0929b08b0f20153df8eb1a488ce2
https://doi.org/10.1016/0022-0248(92)90402-5
https://doi.org/10.1016/0022-0248(92)90402-5
Publikováno v:
Journal of Crystal Growth. 111:860-863
The limiting conditions of selective epitaxial growth (SEG) on SiO2 patterned Si(001) substrate were studied for Si gas-source molecular beam epitaxy (MBE) by use of 100% Si2H6. In the initial stage of growth, epitaxial Si was selectively grown on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3a11e2c28d65b7f997082182b4f1751
https://doi.org/10.1016/0022-0248(91)91097-t
https://doi.org/10.1016/0022-0248(91)91097-t
Autor:
Junro Sakai
Publikováno v:
Journal of the Vacuum Society of Japan. 57:79-79
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5a4b3220ed12acd68d7acf43a24dad5
https://doi.org/10.3131/jvsj2.57.79
https://doi.org/10.3131/jvsj2.57.79
Autor:
Bruce E. White, Supika Mashiro, Junro Sakai, Takayuki Kawashima, Ramachandran Muralidhar, Rajesh A. Rao, Bich-Yen Nguyen
Publikováno v:
MRS Proceedings. 704
Applicability of SPA (Surface Photo Absorption) as an in-situ monitor of Si nanocrystal formation was comparatively studied to a monitoring with pyrometer.Although both SPA and pyrometer provide a signature of the Si nanocrystals nucleation and growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c286670046e92027ab30cf45ff1ca2b4
https://doi.org/10.1557/proc-704-w9.11.1
https://doi.org/10.1557/proc-704-w9.11.1
Autor:
Junro Sakai, John G. Ekerdt, Jianhong Zhu, William T. Leach, Supika Mashiro, Takayuki Kawshima
Publikováno v:
MRS Proceedings. 686
A model is presented that describes silicon nanoparticle deposition in terms of disilane decomposition on silicon dioxide, adatom diffusion, nucleation, nanoparticle growth and coalescence. Total nanoparticle densities are output as a function of tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::386febbf4f616f26ea423bc0ff2ff2e0
https://doi.org/10.1557/proc-686-a6.3
https://doi.org/10.1557/proc-686-a6.3
Autor:
Bruce E. White, Bich-Yen Nguyen, Sucharita Madhukar, Junro Sakai, Supika Mashiro, Masato Oishi, Takayuki Kawashima
Publikováno v:
MRS Proceedings. 638
We report a process for Silicon (Si) nano-crystal dots fabrication using a cold-wall Ultrahigh-Vacuum Chemical Vapor Deposition (UHV-CVD) system. Si2H6 gas was used as the pre-curser and irradiated upon SiO2 film on Si wafer to form Si nano-crystal d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5480da858c0c1c77e5ba3b8fae9f2ecd
https://doi.org/10.1557/proc-638-f6.4.1
https://doi.org/10.1557/proc-638-f6.4.1
Publikováno v:
Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbdb0a3da13cda4b4d1b92577bc79457
https://doi.org/10.7567/ssdm.1996.pc-8-6
https://doi.org/10.7567/ssdm.1996.pc-8-6