Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Junmyung, Lee"'
Autor:
Hyejung Jo, Seulgi Shin, Tomoyo Agura, Seoyoun Jeong, Hyovin Ahn, Junmyung Lee, Yejin Kim, Jae Seung Kang
Publikováno v:
Pharmaceuticals, Vol 17, Iss 4, p 531 (2024)
Interleukin (IL)-32 is produced by T lymphocytes, natural killer cells, monocytes, and epithelial cells. IL-32 induces the production of pro-inflammatory cytokines such as tumor necrosis factor (TNF)-α, IL-1β, IL-6, and IL-8, and IL-32 expression i
Externí odkaz:
https://doaj.org/article/54f4222161aa49be9ab4f8d09af9bdc3
Publikováno v:
Journal of Nanoscience and Nanotechnology. 21:5157-5164
Silicon oxycarbide (SiOC) film was etched using a CF4/C6F12O/O2 mixed gas plasma through an inductively coupled plasma etcher. Changes in the dielectric constant and surface chemical bonding properties were investigated using ellipsometry and Fourier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52b35f0b622479aed4500057c7976b76
https://doi.org/10.1166/jnn.2021.19337
https://doi.org/10.1166/jnn.2021.19337
Autor:
Yejin Kim, Junmyung Lee, Jihoon Kim, Chong Won Choi, Young-Il Hwang, Jae Seung Kang, Wang Jae Lee
Publikováno v:
PLoS ONE, Vol 12, Iss 5, p e0178567 (2017)
Recent studies show that IL-22, a cytokine produced by activated CD4+ T cells and NK cells, plays a pathogenic role in acute and chronic skin diseases. While IL-22 is produced by immune cells, the expression of IL-22Rα, the functional subunit of IL-
Externí odkaz:
https://doaj.org/article/8f8ddadbb1d849df93578f78cd9a3d85
Publikováno v:
Science of Advanced Materials. 12:641-646
In this study, we evaluated the possibility of replacing existing perfluorocarbon gas with C7F14, which can be recovered in its liquid state from room-temperature air. We performed plasma etching of SiON films using the CF4 + X + O2 mixed gas, where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0cb47327597b6c1fc1a500c28039e13
https://doi.org/10.1166/sam.2020.3677
https://doi.org/10.1166/sam.2020.3677
Publikováno v:
Applied Surface Science. 477:198-203
We conducted plasma treatment on polydimethylsiloxane (PDMS) films using inductively coupled C4F8/O2/Ar gas mixture plasma to modify their surface properties. We investigated the relationship between plasma characteristics and the changes in PDMS sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24b6b96ff9c5566b0445f7931664f225
https://doi.org/10.1016/j.apsusc.2017.11.009
https://doi.org/10.1016/j.apsusc.2017.11.009
Publikováno v:
Plasma Chemistry and Plasma Processing. 39:1127-1144
In this work, we investigated the etching characteristics of SiOxNy thin films in CF4 + CHF3 + O2 inductively coupled radiofrequency (13.56 MHz) plasma. SiOxNy etching rates were measured as functions of the CF4/CHF3 mixing ratio at constant O2 fract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1ee125823fbd0c2c306e35d35a90556
https://doi.org/10.1007/s11090-019-09973-w
https://doi.org/10.1007/s11090-019-09973-w
Publikováno v:
Nanoscale. 11:18282-18289
The aim of this study is to develop a novel method for the accurate diagnosis of the infection status of viral diseases, which requires discriminated and quantitative detection of different anti-virus immunoglubulin subtypes. Considering hepatitis A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f4cb5eb7e8c53f56222fbb70e801ddbb
https://doi.org/10.1039/c9nr06160f
https://doi.org/10.1039/c9nr06160f
Publikováno v:
Journal of nanoscience and nanotechnology. 21(10)
Silicon oxycarbide (SiOC) film was etched using a CF₄/C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::525ed8b599a0f86d5e117f3bf33e3cf5
https://pubmed.ncbi.nlm.nih.gov/33875101
https://pubmed.ncbi.nlm.nih.gov/33875101
Publikováno v:
Thin Solid Films. 749:139185
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cefc22622ceceb64e8ffcf9f854d7b5a
https://doi.org/10.1016/j.tsf.2022.139185
https://doi.org/10.1016/j.tsf.2022.139185
Publikováno v:
Plasma Chemistry and Plasma Processing. 39:325-338
The comparative study of SiC and SiO2 etching kinetics as well as the evaluation of SiC etching mechanisms in CF4 + Ar, Cl2 + Ar and HBr + Ar gas mixtures in inductively coupled plasma reactor were carried out. For each binary gas system, the experim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33c40390cef2b5aef7d81cd2976b037a
https://doi.org/10.1007/s11090-018-9933-z
https://doi.org/10.1007/s11090-018-9933-z