Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Junli Yin"'
Autor:
Han Yu, Yan Wang, Xinhui Zou, Junli Yin, Xiaoyu Shi, Yuhao Li, Heng Zhao, Lingyuan Wang, Ho Ming Ng, Bosen Zou, Xinhui Lu, Kam Sing Wong, Wei Ma, Zonglong Zhu, He Yan, Shangshang Chen
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract Fullerene acceptors typically possess excellent electron-transporting properties and can work as guest components in ternary organic solar cells to enhance the charge extraction and efficiencies. However, conventional fullerene small molecul
Externí odkaz:
https://doaj.org/article/7173a2e5a84247bbb35705411b0e130a
Publikováno v:
Micro and Nano Systems Letters, Vol 7, Iss 1, Pp 1-7 (2019)
Abstract This work presents a flexible cable-shaped supercapacitor based on carbon fibers (CFs) coated with graphene flakes (GFs) for wearable electronic applications. The CF bundles were adopted as base materials and the GFs were coated on the surfa
Externí odkaz:
https://doaj.org/article/6e7ca1ec85b84d0595a3e9f4415c7052
Autor:
Huilin Xie, Zhenyu Bi, Junli Yin, Zeshun Li, Lianrui Hu, Chen Zhang, Jianquan Zhang, Jacky W. Y. Lam, Pengfei Zhang, Ryan T. K. Kwok, Kai Li, Ben Zhong Tang
Publikováno v:
ACS Nano. 17:4591-4600
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b336960c77f395df0fff42b16db7a108
https://doi.org/10.1021/acsnano.2c10661
https://doi.org/10.1021/acsnano.2c10661
Publikováno v:
IEEE Transactions on Electron Devices. :1-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff42de6724727c7f34eb9fcb3365f55
https://doi.org/10.1109/ted.2023.3264718
https://doi.org/10.1109/ted.2023.3264718
Autor:
Ruijie Ma, Cenqi Yan, Patrick Wai-Keung Fong, Jiangsheng Yu, Heng Liu, Junli Yin, Jianhua Huang, Xinhui Lu, He Yan, Gang Li
Publikováno v:
Energy & Environmental Science. 15:2479-2488
High efficiencies for organic solar cells are achieved. Two different morphology change paths are revealed with both in situ and ex situ measurements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::333360ab5d9b5c22f8f62d3146588538
https://doi.org/10.1039/d2ee00740a
https://doi.org/10.1039/d2ee00740a
Autor:
Guangye Zhang, Zongcheng Miao, He Yan, Kai Chen, Siyi Ding, Tao Yang, Junli Yin, Tao Liu, Ruijie Ma, Zhenghui Luo, Dongfeng Xue
Publikováno v:
ACS Applied Materials & Interfaces. 13:51078-51085
This work demonstrates a simple yet effective method to significantly improve the power conversion efficiency (PCE) of highly efficient non-fullerene organic solar cells by mixing two electron transport materials. The new electron transport layer sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d33d475bff2afc9df44e38309ef13d96
https://doi.org/10.1021/acsami.1c16550
https://doi.org/10.1021/acsami.1c16550
Publikováno v:
Angewandte Chemie. 134
Electron transporting materials (ETMs) play vital roles in determining the efficiency and stability of inverted perovskite solar cells. The widely used PCBM is prone to undesirable aggregation and migration in a cell, thus impairing device stability.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::35279bcce63be5dba116717adaae0e79
https://doi.org/10.1002/ange.202210610
https://doi.org/10.1002/ange.202210610
Publikováno v:
Composites Science and Technology. 238:110012
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be0750c3209e0e82c0281cf8422600e5
https://doi.org/10.1016/j.compscitech.2023.110012
https://doi.org/10.1016/j.compscitech.2023.110012
Publikováno v:
IEEE Transactions on Electron Devices. 67:5091-5096
To describe both Arrhenius and non-Arrhenius temperature-dependent drain currents for the organic thin-film transistors, the effective trapped carrier concentration expression is presented. Based on the expression, following the Shur and Hack’s tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee9e612a9fbc2753725e259c6c6777c6
https://doi.org/10.1109/ted.2020.3025269
https://doi.org/10.1109/ted.2020.3025269
Publikováno v:
IEEE Transactions on Electron Devices. 67:3637-3644
Analytical drain current and capacitance model is developed for the amorphous InGaZnO (a-IGZO) thin-film transistor (TFT). The numerical Pao–Sah model is presented to describe the temperature characteristics considering the deep and tail trap state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e01e7c4fdb6f471a5725c20df12f67a
https://doi.org/10.1109/ted.2020.3009086
https://doi.org/10.1109/ted.2020.3009086