Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Junkyo Suh"'
Autor:
Pranav Ramesh, Nobi Fuchigami, Krishna C. Saraswat, Gang Chen, Junkyo Suh, Karl A. Littau, Kurt Weiner, Raisul Islam, Donovan Lee, Reuben T. Collins
Publikováno v:
ACS Applied Materials & Interfaces. 9:17201-17207
Drastic reduction in nickel oxide (NiOx) film resistivity and ionization potential is observed when subjected to ultraviolet (UV)/ozone (O3) treatment. X-ray photoemission spectroscopy suggests that UV/O3 treatment changes the film stoichiometry by i
Autor:
Paul C. McIntyre, Ann F. Marshall, Michael R. Braun, Anahita Pakzad, Andrew C. Meng, Krishna C. Saraswat, Junkyo Suh, Taeho R. Kim, Marc Jaikissoon
Publikováno v:
DRC
Incorporating high mobility material in channel and 3D stacking channels in a multigate device can enable next-generation high-performance CMOS technology [1], [2]. Ge is a potential channel material due to its superior carrier mobility and light eff
Publikováno v:
Solid-State Electronics. 117:77-87
This paper discusses the effects of additional oxidation after Ge condensation on electrical characteristics of fully depleted germanium-on-insulator (FDGOI) p-channel MOSFETs. We highlight the passivation of the back interface of GOI layers by the a
Autor:
Amir Ghobadi, Junkyo Suh, Nazek El-Atab, Krishna C. Saraswat, Raisul Islam, Ali Kemal Okyay, Ammar Nayfeh, Turkan Gamze Ulusoy
Publikováno v:
Nanotechnology
The manipulation of matter at the nanoscale enables the generation of properties in a material that would otherwise be challenging or impossible to realize in the bulk state. Here, we demonstrate growth of zirconia nano-islands using atomic layer dep
Autor:
Raisul, Islam, Gang, Chen, Pranav, Ramesh, Junkyo, Suh, Nobi, Fuchigami, Donovan, Lee, Karl A, Littau, Kurt, Weiner, Reuben T, Collins, Krishna C, Saraswat
Publikováno v:
ACS applied materialsinterfaces. 9(20)
Drastic reduction in nickel oxide (NiO
Publikováno v:
ECS Meeting Abstracts. :2036-2036
Zirconia (ZrO2) nanostructures have been used in various applications such as protective barriers in optics, interference filters, photo-catalysts, oxygen sensors, in addition to buffer layers or gate oxides in microelectronic devices, etc. All of th
Autor:
Hua Chung, Colleen S. Fenrich, Junkyo Suh, Matthew Morea, Yi-Chiau Huang, Theodore I. Kamins, Kai Zang, Krishna C. Saraswat, Yijie Huo, Corinna E. Brendel, James S. Harris
Publikováno v:
Applied Physics Letters. 110:091109
We study the effect of surface passivation on pseudomorphic multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors. A combination of ozone oxidation to form GeOx and GeSnOx on the surface of the diodes followed by atomic layer deposition of Al2O3
Autor:
Noriyuki Taoka, Rena Suzuki, Shinichi Takagi, Rui Zhang, Masafumi Yokoyama, Sanghyeon Kim, Junkyo Suh, Mitsuru Takenaka
Publikováno v:
2012 International Electron Devices Meeting.
CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs in the future, because of the enhanced carrier transport properties. However, the device/proce
Autor:
Suock Chung, J. H. Lee, W. S. Nam, Janice H. Nickel, Hyunsang Hwang, Junkyo Suh, Kee-jeung Lee, Kwang-Ok Kim, Y. K. Kim, R.S. Williams, Yong Soo Kim, K. M. Rho, Ho-Seok Lee, Hyejung Choi, Sung Kye Park, H. S. Shin, K. Cho, J. T. Cheong, S. N. Park, S. Chae, Juyeab Lee, Kwon Hong, Sook-Joo Kim, Jianhua Yang, Seoung-Ju Chung, Seung Hwan Lee, Hyung Dong Lee, H. G. Jeong, C. G. Lee, Y. S. Sohn, Hyeon-Koo Cho, E.-R. Hwang, Frederick A. Perner, Sung-Joo Hong, Jumsoo Kim
Publikováno v:
2012 Symposium on VLSI Technology (VLSIT).
4F2 selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell are
Publikováno v:
69th Device Research Conference.
Much attention has recently been paid to MOS channel materials with high mobility and resulting high injection velocity that can increase ION and reduce delay [1]. Among them, ultrathin body SiGe-On-Insulator (SGOI) structure with high compressive st