Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Junki Sone"'
Publikováno v:
New Journal of Physics, Vol 16, Iss 9, p 095004 (2014)
Epitaxial growth of silicene on atomically flat ultra-thin Ag(111) films was investigated using scanning tunneling microscopy. The Ag films were prepared by low-temperature deposition of Ag on Si substrates, followed by soft annealing at room tempera
Externí odkaz:
https://doaj.org/article/b2aefd6d24c242aea4c5fbb22b8ddae0
Publikováno v:
Japanese Journal of Applied Physics. 55:035502
We studied the growth of Si at the surface of epitaxial graphene on 6H-SiC(0001). Characteristic flower-like islands with a thickness of 2 to 3 nm nucleated during the growth from 290 to 420 K. The islands became featureless in growth at higher tempe
Publikováno v:
Applied Physics Letters. 105:151603
The growth of Si layers on Si(111) √3×√3-Ag substrates was studied for coverages of up to a few mono-layers. Atomically flat islands were observed to nucleate in the growth at 570 K. The top surfaces of the islands were covered in Ag atoms and e
Autor:
Susumu Okada, Junki Sone
Publikováno v:
Journal of the Physical Society of Japan. 82:064706
Based on total-energy electronic-structure calculations within density functional theory, we find that massless electrons emerge on hexagonally arranged dangling bond networks on partially hydrogen-covered (111) surfaces of diamond and Si. Fermi velo
Publikováno v:
Applied Physics Letters; 10/13/2014, Vol. 105 Issue 15, p1-4, 4p, 2 Color Photographs, 2 Graphs
Publikováno v:
Japanese Journal of Applied Physics; 2016, Vol. 55 Issue 3, p1-1, 1p