Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Junki Nagakubo"'
Autor:
Genichi Motomura, Kei Ogura, Yukiko Iwasaki, Junki Nagakubo, Masaaki Hirakawa, Tsutomu Nishihashi, Toshimitsu Tsuzuki
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065228-065228-8 (2020)
Quantum dots (QDs) are expected to be applied to emitting materials used in wide-color-gamut displays. However, the development of low-toxic alternatives is necessary because QDs that exhibit high color purity and highly efficient emission contain to
Externí odkaz:
https://doaj.org/article/c7c600b82d4d456da0a83737d37dd2aa
Autor:
Takahiro Sawada, Masaaki Hirakawa, Kazumasa Horita, Tsutomu Nishihashi, Hirohiko Murakami, Junki Nagakubo
Publikováno v:
SID Symposium Digest of Technical Papers. 49:28-31
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf59d4d38d80c077d77a302ac932eed4
https://doi.org/10.1002/sdtp.12483
https://doi.org/10.1002/sdtp.12483
Autor:
Tsutomu Nishihashi, Kei Ogura, Genichi Motomura, Junki Nagakubo, Toshimitsu Tsuzuki, Yukiko Iwasaki, Masaaki Hirakawa
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065228-065228-8 (2020)
Quantum dots (QDs) are expected to be applied to emitting materials used in wide-color-gamut displays. However, the development of low-toxic alternatives is necessary because QDs that exhibit high color purity and highly efficient emission contain to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::db3dda54021ac9007a9f5f174dde0ccd
https://doaj.org/article/c7c600b82d4d456da0a83737d37dd2aa
https://doaj.org/article/c7c600b82d4d456da0a83737d37dd2aa
Publikováno v:
Chemical Physics. 528:110512
InP-based quantum dots are promising candidates as Cd-free quantum dots; however, they require sharper fluorescence to satisfy the next-generation display standard. For this purpose, a deeper understanding of the crystal growth scheme and well-design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c80f26de571b89623bebc76186e29f1
https://doi.org/10.1016/j.chemphys.2019.110512
https://doi.org/10.1016/j.chemphys.2019.110512
Publikováno v:
Phys. Chem. Chem. Phys.. 13:14370-14377
For a material for organic thin-film transistors, not only high mobility but also low threshold voltage and long-term stability are important requirements. In order to realize these properties, materials with relatively large oxidation potentials, na
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3f00a0cca32f86790c5cda1f9ea67f0e
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100627676
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100627676