Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Junjun Xue"'
Autor:
Junjun Xue, Jiaming Tong, Zhujun Gao, Zhouyu Chen, Haoyu Fang, Saisai Wang, Ting Zhi, Jin Wang
Publikováno v:
Frontiers of Optoelectronics, Vol 17, Iss 1, Pp 1-8 (2024)
Abstract An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and s
Externí odkaz:
https://doaj.org/article/4edc942e41ab40ff8d3bc3c2b05bb04e
Autor:
Shuang Chen, Junjun Xue
Publikováno v:
IEEE Access, Vol 10, Pp 32696-32705 (2022)
A new method of road roughness level identification based on the bidirectional gated recurrent unit (BiGRU) network is proposed in this paper, which is contribute to solve the problems of intelligent chassis technology such as suspension control. Fir
Externí odkaz:
https://doaj.org/article/a0dd1d8b0da94f1d85678687ddc2111c
Autor:
Qing Cai, Qian Li, Mo Li, Yin Tang, Jin Wang, Junjun Xue, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-7 (2019)
Back-illuminated Al0.1Ga0.9N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a dev
Externí odkaz:
https://doaj.org/article/8a64ee7aed0440439ee8fb8307ffc24b
Autor:
Rui Wang, Hui Guo, Qianyu Hou, Jianming Lei, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Publikováno v:
Micromachines, Vol 13, Iss 7, p 1096 (2022)
In this work, temperature-dependent transient threshold voltage (VT) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltag
Externí odkaz:
https://doaj.org/article/71145faeee454c699a58cd8e4ef66ee7
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 4, Pp 1-7 (2017)
To enhance the impact ionization coefficient of holes, we proposed an improved solar-blind AlGaN avalanche photodiode (APD) structure by using a low-Al-composition AlGaN multiplication layer and a filter based on periodic photonic crystal together wi
Externí odkaz:
https://doaj.org/article/228f2fa54f654a05bb5850d899a114fc
Autor:
Jianjun Chang, Dunjun Chen, Junjun Xue, Kexiu Dong, Bin Liu, Hai Lu, Rong Zhang, Youdou Zheng
Publikováno v:
IEEE Photonics Journal, Vol 8, Iss 1, Pp 1-7 (2016)
The characteristics of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with polarization-doped p-type layers were numerically analyzed. The energy band diagrams, carrier distributions in the multiple quantum wells (MQWs) and the p-typ
Externí odkaz:
https://doaj.org/article/2e38b6af102d4d4493ce0d5eaeaa0db2
Autor:
Kaicheng Xu, Zhujun Gao, Jiaming Tong, Ting Zhi, Rui Wang, Shanwen Hu, Zhouyu Chen, Fang, Haoyu, Jin Wang, Dunjun Chen, Guofeng Yang, Rong Zhang, Junjun Xue
Publikováno v:
ACS Applied Nano Materials; 7/26/2024, Vol. 7 Issue 14, p16018-16030, 13p
Publikováno v:
Physics Reports. 1013:1-33
Autor:
Kai Chen, Dongqi Zhang, Pengfei Shao, Ting Zhi, Jianguo Zhao, Yimeng Sang, Wenxiao Hu, Yuchong Ye, Junjun Xue, Dunjun Chen, Tao Tao, Bin Liu
Publikováno v:
ACS Applied Nano Materials. 5:13149-13157
Autor:
Saisai Wang, Pengfei Shao, Ting Zhi, Zhujun Gao, Wenhao Chen, Lin Hao, Qing Cai, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Lianhui Wang, Rong Zhang
Publikováno v:
Advanced Photonics Nexus. 2