Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Junjiang Tian"'
Autor:
Haizhong Guo, Jingjing Rao, Xingsen Gao, Xubing Lu, Jun-Ming Liu, Zuhuang Chen, Lei Zhao, Guofu Zhou, Junjiang Tian, Yang Zhang, Haijun Wu, Zhen Fan, Stephen J. Pennycook
Publikováno v:
ACS Applied Materials & Interfaces. 12:21883-21893
Nanoscale phase mixtures in transition-metal oxides (TMOs) often render these materials susceptible to external stimuli (electric field, mechanical stress, etc.), which can lead to rich functional properties and device applications. Here, direct obse
Autor:
Xingsen Gao, Minghui Qin, Junjiang Tian, Luyong Zhang, Jun-Ming Liu, Zhen Fan, Min Zeng, Zhipeng Hou, Deyang Chen, Lanqing Hong, Jinwei Gao, Zhengwei Tan, Guofu Zhou, Xubing Lu, Yue Jiang
Publikováno v:
NPG Asia Materials, Vol 11, Iss 1, Pp 1-13 (2019)
Achieving high power conversion efficiencies (PCEs) in ferroelectric photovoltaics (PVs) is a longstanding challenge. Although recently ferroelectric thick films, composite films, and bulk crystals have all been demonstrated to exhibit PCEs >1%, thes
Autor:
Junjiang, Tian, Haijun, Wu, Zhen, Fan, Yang, Zhang, Stephen J, Pennycook, Dongfeng, Zheng, Zhengwei, Tan, Haizhong, Guo, Pu, Yu, Xubing, Lu, Guofu, Zhou, Xingsen, Gao, Jun-Ming, Liu
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 31(49)
Resistive switching (RS) memory has stayed at the forefront of next-generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating bro
Autor:
Zhen Fan, Jun-Ming Liu, Fei Sun, Dongfeng Zheng, Xubing Lu, Junjiang Tian, Zhengwei Tan, Min Zeng, Deyang Chen, Xingsen Gao, Minghui Qin, Z. Y. Chen, Yadong Wang
Publikováno v:
Physical Review Applied. 11
$R\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}n$ is of critical concern when a memory device stores dat
Autor:
Yadong Wang, Junjiang Tian, Deyang Chen, Dongfeng Zheng, Z. Y. Chen, Zhen Fan, Jun-Ming Liu, Luyong Zhang, Qiliang Li, Xingsen Gao, Zhengwei Tan, Fei Sun, Zhipeng Hou, Min Zeng, Xiong Deng
Publikováno v:
Journal of Alloys and Compounds. 811:152013
Ferroelectric photovoltaic materials have attracted intensive interest due to their intriguing above-bandgap photovoltage, while the low photocurrent limits their further device applications. In this work, both enhanced and tunable photovoltaic effec
Autor:
Xingsen Gao, Haizhong Guo, Zhen Fan, Pu Yu, Guofu Zhou, Xubing Lu, Yang Zhang, Haijun Wu, Zhengwei Tan, Junjiang Tian, Stephen J. Pennycook, Jun-Ming Liu, Dongfeng Zheng
Publikováno v:
Advanced Materials. 31:1903679
Resistive switching (RS) memory has stayed at the forefront of next-generation nonvolatile memory technologies. Recently, a novel class of transition metal oxides (TMOs), which exhibit reversible topotactic phase transformation between insulating bro
Autor:
Dongfeng Zheng, Zhengwei Tan, Deyang Chen, Yadong Wang, Xingsen Gao, Luyong Zhang, Min Zeng, Zengxing Lu, Minghui Qin, Jun-Ming Liu, Zhen Fan, Junjiang Tian, Xubing Lu
Publikováno v:
Applied Physics Letters. 112:152905
The polarization imprint along with the photovoltaic (PV) effect has been studied in Pt/Pb(Zr0.3Ti0.7)O3/SrRuO3 ferroelectric capacitors. It is shown that the positive DC poling induces the imprint with a downward direction whereas the negative DC po