Zobrazeno 1 - 10
of 43
pro vyhledávání: '"Junji Tanimura"'
Publikováno v:
Surface and Interface Analysis. 37:141-144
The diffusion phenomena at the interface between dielectric films and compound semiconductors under two kinds of condition (humid or dry thermal) have been studied by means of secondary ion mass spectrometry (SIMS). Under the humid condition-the pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3809880bb9f8f52bb161b9a69183203
https://doi.org/10.1002/sia.1950
https://doi.org/10.1002/sia.1950
Publikováno v:
Plasma Sources Science and Technology. 12:S72-S79
Plasma–surface interactions during etching of polysilicon gates in high-density HBr-based plasmas have been investigated by x-ray photoelectron spectroscopy and transmission electron microscopy. Significant deposition of etch by-products, SiBrxOy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2c6b5212c7598eae99e4dbbadb1e678
https://doi.org/10.1088/0963-0252/12/4/022
https://doi.org/10.1088/0963-0252/12/4/022
Autor:
Hiromi Kiyama, Toru Inagaki, Shigemitsu Maruno, Yasunori Tokuda, Kazuma Yamamoto, Junji Tanimura, Shinichi Satoh, Takumi Nakahata, Atushi Miyamoto, Taisuke Furukawa
Publikováno v:
Journal of Crystal Growth. 226:443-450
We studied the influence of plasma etching damage on epitaxial Si growth using ultrahigh vacuum chemical vapor deposition. The damaged layer induced on substrate surface had an amorphous structure that had some carbon, oxygen, and fluorine in its com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d014e11345de8bbf707f06c679113224
https://doi.org/10.1016/s0022-0248(01)01407-5
https://doi.org/10.1016/s0022-0248(01)01407-5
Autor:
Kazumasa Kawase, Hiroshi Kurokawa, Junji Tanimura, M Inoue, Kiyoteru Kobayashi, Tamotsu Ogata, Akinobu Teramoto
Publikováno v:
Materials Science in Semiconductor Processing. 2:225-231
We studied nitrogen distribution, concentration and chemical state in NO- and N2O-exposed silicon oxide films, to understand the relationship between nitridation and suppression of stress-induced leakage current (SILC) resulting from Fowler–Nordhei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3571fcdd73874b7227198b405372a34b
https://doi.org/10.1016/s1369-8001(99)00019-0
https://doi.org/10.1016/s1369-8001(99)00019-0
Autor:
Junji Tanimura, Toshiro Isu, Y. Endoh, Kenichi Ohtsuka, Masayuki Imaizumi, Masahiro Nunoshita, Muneyoshi Suita
Publikováno v:
Journal of Crystal Growth. 154:41-46
We have investigated crystalline defects in ZnSe epitaxial layers introduced in the initial stage of the growth by gas source molecular beam epitaxy (GSMBE) on (100) GaAs epitaxial layers. The ZnSe layers were grown on the GaAs surfaces with a (4 ×
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cceb09f48c0075529176999e80837f4c
https://doi.org/10.1016/0022-0248(95)00202-2
https://doi.org/10.1016/0022-0248(95)00202-2
Autor:
Yuzuru Maki, Tetsuya Takami, Kazuyoshi Kojima, Toshiyuki Oishi, Masayuki Kataoka, Tetsuo Ogama, Yukihiko Wada, Junji Tanimura, Masahiro Nunoshita, Kenichi Kuroda, Osamu Wada, Akihiko Furukawa
Publikováno v:
Physica C: Superconductivity. 223:71-74
X-ray and ICP-MS characterizations are performed in c -axis oriented Bi 2 Sr 2 CaCu 2 O x (2212) films on (001) MgO single-crystal substrates. The chemical composition adjustment enables us to realize two distinctly different in-plane epitaxial state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b4ce8762d7ab0e899becf65ccc6bf7d
https://doi.org/10.1016/0921-4534(94)90696-3
https://doi.org/10.1016/0921-4534(94)90696-3
Publikováno v:
Physical Review B. 48:17599-17602
We analyze the photoluminescence and photoluminescence-excitation spectra of a 10-nm-thick (311)-oriented GaAs/Al 0.33 Ga 0.67 As single quantum well of state-of-the-art optical quality. The ground-state (1S) heavy-hole exciton transition is coincide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c4c8fd03efc5cde4069e0ccdfb7b99
https://doi.org/10.1103/physrevb.48.17599
https://doi.org/10.1103/physrevb.48.17599
Publikováno v:
Physical Review B. 47:8316-8319
Crystal structures of Bi 2 Sr 2 CaCu 2 O x thin films of which the c axes are tilted about 45 o against substrate surfaces were investigated with x-ray-diffraction, x-ray asymmetric reflection, x-ray topography, and cross-sectional high-resolution tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bd57ccda2847f304a8fdbd67262d87a
https://doi.org/10.1103/physrevb.47.8316
https://doi.org/10.1103/physrevb.47.8316
Publikováno v:
Applied Physics Letters. 79:2535-2537
Plasma–surface interactions occurring during overetch of polycrystalline silicon (poly-Si) gate etching with high-density HBr/O2 plasmas have been investigated by x-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfbbf9c313e129030c76889567f567f3
https://doi.org/10.1063/1.1409952
https://doi.org/10.1063/1.1409952
Autor:
Tetsuo Ogama, Junji Tanimura, Masayuki Kataoka, Tetsuya Takami, Osamu Wada, Kazuyoshi Kojima, Kenichi Kuroda
Publikováno v:
Physica C: Superconductivity. 201:131-136
A (001) Bi2Sr2CaCu2Ox thin film fabricated on a (001) MgO substrate has been found to consist of two kinds of domain with in-plane orientation of Bi2Sr2CaCu2Ox [100]∥MgO [510] and Bi2Sr2CaCu2Ox [100] ∥MgO [5 1 0]. It is shown that near coincidenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba70b24ec6b0173efd9d77a35d6ad50d
https://doi.org/10.1016/0921-4534(92)90114-r
https://doi.org/10.1016/0921-4534(92)90114-r