Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Junji Sawahata"'
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
Silicon (Si) films were obtained through aluminothermic reduction of the quartz (SiO2) substrates, where the surface of the quartz in contact with the deposited aluminum (Al) layer has been converted to film Si during high-temperature annealing follo
Externí odkaz:
https://doaj.org/article/2ca6ddf775e640178315f4d9bc89dfcf
Autor:
Junji Sawahata, Tasuku Kawasaki
Publikováno v:
Thin Solid Films. 685:210-215
Sb-doped SnO 2 thin films were prepared by metal organic decomposition through pyrolysis of organic acid salts. The dependence of the structural and electrical properties of the films on the Sb concentration, annealing temperature, and film thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddcf067224ecf189d8e110435bfb65cd
https://doi.org/10.1016/j.tsf.2019.06.040
https://doi.org/10.1016/j.tsf.2019.06.040
Autor:
Junji Sawahata
Publikováno v:
Thin Solid Films. 656:1-5
In this study, Eu-doped SnO 2 thin films were prepared by a metal organic decomposition method through a pyrolysis of organic acid salts. The effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cf88484a6762a2bb51e06601126f39c
https://doi.org/10.1016/j.tsf.2018.04.007
https://doi.org/10.1016/j.tsf.2018.04.007
Publikováno v:
Journal of Crystal Growth. 311:2042-2045
The relationship between optical and structural properties of Er-doped GaN grown by molecular beam epitaxy on sapphire (0 0 0 1) substrates was studied. The Er-related luminescence with wavelength at around 558 nm originated from 4 S 3/2 to 4 I 15/2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32dd5805b38a21224d467cdc1c09c115
https://doi.org/10.1016/j.jcrysgro.2008.12.007
https://doi.org/10.1016/j.jcrysgro.2008.12.007
Publikováno v:
physica status solidi (a). 205:71-74
Luminescence spectra of Eu-doped GaN with varying Eu concentration and V/III ratio were investigated. Eu-related luminescence originating from the 5 D 0 - 7 F 2 transition of Eu 3+ was observed at about 622 nm. The luminescence basically consisted of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f31568b0653de7955680befb1b9add9
https://doi.org/10.1002/pssa.200776706
https://doi.org/10.1002/pssa.200776706
Autor:
Junji Sawahata, Jongwon Seo, Shinya Nemoto, Daisuke Saito, Katsuhiro Akimoto, Mikio Takiguchi
Publikováno v:
Journal of Crystal Growth. :420-423
Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy were investigated. The Eu-related luminescence originating from 5 D 0 – 7 F 2 transition of Eu 3+ was observed in the wavelength range of 620–624
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f8d9cc531e367254c4396de8428e6a
https://doi.org/10.1016/j.jcrysgro.2006.11.102
https://doi.org/10.1016/j.jcrysgro.2006.11.102
Publikováno v:
Optical Materials. 28:759-762
Structural properties of Eu-doped GaN with the Eu concentration of about 2 at% were studied by cross sectional transmission electron microscope (TEM) observation, and electrical and optical properties of n-GaN/Eu-doped GaN/p-GaN structure were discus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33c57d483c52e3ab66ff4c991434609
https://doi.org/10.1016/j.optmat.2005.09.016
https://doi.org/10.1016/j.optmat.2005.09.016
Autor:
Hyungjin Bang, Katsuhiro Akimoto, Jongwon Seo, H. Yanagihara, Junji Sawahata, E. Kita, Mikio Takiguchi
Publikováno v:
physica status solidi (c). 2:2458-2462
Structural and magnetic properties of Co doped GaN films grown by molecular beam epitaxy on sapphire(0001) substrates were studied. In the X-ray diffraction measurements and the extended X-ray absorption fine structure analysis, the existence of seco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29eb824f14819070ab2761b287c25a13
https://doi.org/10.1002/pssc.200461465
https://doi.org/10.1002/pssc.200461465
Publikováno v:
Science and Technology of Advanced Materials. 6:644-648
A single crystalline Eu-doped GaN was grown by gas-source molecular beam epitaxy and photoluminescence (PL) properties were studied. The PL spectra show red-emission at 622 nm originating from intra 4f–4f transition of Eu3+ ion without band-edge em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7289016fd75f214f988d0d9671aa74a
https://doi.org/10.1016/j.stam.2005.07.001
https://doi.org/10.1016/j.stam.2005.07.001
Autor:
Zhiqiang Li, Mikio Takiguchi, Shinichi Morishima, Junji Sawahata, Hyungjin Bang, Katsuhiro Akimoto, Yoshio Bando, Takaharu Tsukamoto, Jongwon Seo
Publikováno v:
physica status solidi (b). 241:2708-2712
The structural and optical properties of europium-doped GaN were studied. The Eu-related luminescence was observed at 622 nm and originated from the intra-4f transition of the Eu 3+ ion. The intensity of the luminescence increased as the Eu concentra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d393c96ce7a010780b6da38fa51519b
https://doi.org/10.1002/pssb.200405027
https://doi.org/10.1002/pssb.200405027