Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Junji Saraie"'
Publikováno v:
Journal of Crystal Growth. :755-758
Fabrication of high quality CdSe quantum dots is described in this paper. The source material was CdSe compound and the amount of the source supply was fixed to 2.2 monolayers throughout the study. The orientation of GaAs substrates, the source suppl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35a5165de67c6b3e307e66e85b6043d5
https://doi.org/10.1016/j.jcrysgro.2006.11.103
https://doi.org/10.1016/j.jcrysgro.2006.11.103
Publikováno v:
physica status solidi (c). 1:759-762
Single quantum dots (QD) luminescence from MBE-grown CdSe/ZnSe QD was observed by micro-cathodoluminescence measurement. The scanning area of the exciting electron beam was decreased from 100 × 100 μm2 to 0.2 × 0.2 μm2. A broad emission was obser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::188008943d637364a91527eb4c0e2ade
https://doi.org/10.1002/pssc.200304150
https://doi.org/10.1002/pssc.200304150
Publikováno v:
Journal of the Society of Materials Science, Japan. 53:1318-1322
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76472c26d652955b815243c4ec6393cf
https://doi.org/10.2472/jsms.53.1318
https://doi.org/10.2472/jsms.53.1318
Publikováno v:
physica status solidi (c). :2794-2797
InN/Si heterojunctions consisting of InN with an oxygen concentration of ∼3% and a bandgap of 1.8 ∼ 2.0 eV were formed by MBE. The band alignment of the heterojunctions turned out be type II with a band discontinuity of 1.49 ∼ 1.60 eV. A SiNx i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1e5db5e1075282b0d7084dafb2df2a
https://doi.org/10.1002/pssc.200303423
https://doi.org/10.1002/pssc.200303423
Publikováno v:
Journal of Crystal Growth. 251:602-606
We studied the growth conditions for controlling CdSeTe epilayer composition. Te atoms are readily incorporated into CdSeTe epilayers. However, we could not control the Te composition by the beam intensity ratio of Te to Cd. Therefore, Te atoms are n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64c6a34655e46aad946434496fdf8ae9
https://doi.org/10.1016/s0022-0248(02)02434-x
https://doi.org/10.1016/s0022-0248(02)02434-x
Autor:
Nobuo Matsumura, Junji Saraie
Publikováno v:
SHINKU. 46:111-115
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f88d92b80386fc7e99d9db233035eb97
https://doi.org/10.3131/jvsj.46.111
https://doi.org/10.3131/jvsj.46.111
Publikováno v:
Journal of Crystal Growth. :1550-1553
CdSeTe layers were grown on GaAs(1 0 0) substrates by molecular beam epitaxy. The beam-intensity ratios of Se to Te atoms were changed to control the composition of the CdSeTe mixed crystals. The Te atoms were more readily incorporated into the epila
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b61eea8bf9642438fff9ed80c2aba25a
https://doi.org/10.1016/s0022-0248(01)02366-1
https://doi.org/10.1016/s0022-0248(01)02366-1
Publikováno v:
Journal of Crystal Growth. :1075-1078
Impurity incorporation from a SiO 2 mask in epitaxially laterally overgrown (ELO) GaN was depicted using a newly developed cryogenic scanning photoluminescence (PL) microscope. Both plan-view and cross-sectional PL images with a spatial resolution of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79521d1136872d805871edaf5e07dd50
https://doi.org/10.1016/s0022-0248(01)02139-x
https://doi.org/10.1016/s0022-0248(01)02139-x
Publikováno v:
Journal of Crystal Growth. :1536-1540
We successfully fabricated wurtzite quantum-well structures with Zn 0.4 Cd 0.6 Se barrier layers and a four monolayer CdSe well layer on cubic ZnSe/GaAs(111)B substrates by molecular beam epitaxy. Although the cubic CdSe well layer grew on the cubic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2370260aa7cbc48453ca78fc9d1c3a10
https://doi.org/10.1016/s0022-0248(01)02362-4
https://doi.org/10.1016/s0022-0248(01)02362-4
Publikováno v:
Journal of Crystal Growth. :1121-1125
Self-assembled CdSe single- and multi-quantum-dots layer structures were grown by molecular beam epitaxy with ZnSe barrier layer and were evaluated by photoluminescence measurements. The peak wavelengths of the emission spectra were around 480 nm for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c9289551a8a9a11fcaa21f12c168454
https://doi.org/10.1016/s0022-0248(01)01000-4
https://doi.org/10.1016/s0022-0248(01)01000-4