Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Junji Ohara"'
Autor:
Takashi Ishida, Takashi Ushijima, Shosuke Nakabayashi, Kozo Kato, Takayuki Koyama, Yoshitaka Nagasato, Junji Ohara, Shinichi Hoshi, Masatake Nagaya, Kazukuni Hara, Takashi Kanemura, Masato Taki, Toshiki Yui, Keisuke Hara, Daisuke Kawaguchi, Koji Kuno, Tetsuya Osajima, Jun Kojima, Tsutomu Uesugi, Atsushi Tanaka, Chiaki Sasaoka, Shoichi Onda, Jun Suda
Publikováno v:
Applied Physics Express, Vol 17, Iss 2, p 026501 (2024)
To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which r
Externí odkaz:
https://doaj.org/article/3223aa72ff4e4785aca11409f44a7c1a
Publikováno v:
Japanese Journal of Applied Physics. 62:020903
We investigated the effect of H2 addition in halide-vapor-phase epitaxy of GaN on Ga-polar GaN(0001) using an external GaCl3 supply method. To overcome the problem of the very low growth rate on GaN(0001) using GaCl3, we intentionally added H2 to con
Autor:
Kazukuni Hara, Eizou Yamamoto, Motoi Kozawa, Daisuke Uematsu, Junji Ohara, Yuji Mukaiyama, Jun Kojima, Shoichi Onda, Jun Suda
Publikováno v:
Japanese Journal of Applied Physics. 61:070909
One critical issue hindering high-quality, high-speed growth of GaN is cluster formation in the gas phase. We investigated cluster formation in tri-halide vapor phase epitaxial growth of GaN. The growth system is equipped with an external GaCl3 gas s
Autor:
Toru Ujihara, Fumihiro Fujie, H. Yamada, M. Shimizu, Junji Ohara, Shunta Harada, Shoichi Onda, Nobuhiko Kokubo, Sho Inotsume, Yosuke Tsunooka, Miho Tagawa
Publikováno v:
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials.
Autor:
Takeshi Momose, Yukihiro Shimogaki, Masakazu Sugiyama, Hideo Yamada, Hirohisa Uchida, Aiko Kondo, Tatsuya Kamiya, Yasuhiro Kitamura, Junji Ohara
Publikováno v:
The Journal of Supercritical Fluids. 105:193-200
We measured the solubility of bis-(2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) (Cu(tmhd) 2 ) in pure supercritical CO 2 (scCO 2 ) and binary mixtures of H 2 and scCO 2 at 40–100 °C and 11–20 MPa using spectrometric method. The solubility i
Autor:
Sho Inotsume, Nobuhiko Kokubo, Hisashi Yamada, Shoichi Onda, Jun Kojima, Junji Ohara, Shunta Harada, Miho Tagawa, Toru Ujihara
Publikováno v:
physica status solidi (b). 257:2070019
Autor:
Nobuhiko Kokubo, Shunta Harada, Toru Ujihara, Jun Kojima, Hisashi Yamada, Miho Tagawa, Junji Ohara, Shoichi Onda, Sho Inotsume
Publikováno v:
physica status solidi (b). 257:1900527
Autor:
Yuto Hoshino, Junji Ohara, Kazukuni Hara, Nobuyuki Otake, Shoichi Onda, Shigeyuki Takaki, Daisuke Uematsu, Shinichi Tanishita
Publikováno v:
Japanese Journal of Applied Physics. 58:SC1039
Autor:
Toru Ujihara, Shoichi Onda, Hisashi Yamada, Junji Ohara, Yosuke Tsunooka, Nobuhiko Kokubo, Shunta Harada, Fumihiro Fujie, Miho Tagawa, Mitsuaki Shimizu
Publikováno v:
Japanese Journal of Applied Physics. 58:SCCB06
Threading dislocations (TDs) in a HVPE-grown c-plane (0001) GaN single crystal were analyzed by micro Raman spectroscopy mapping. The mapping image exhibited the pairs of higher and lower wavenumber regions of peak shift of GaN, which corresponded to
Autor:
Shoichi Onda, Toru Ujihara, Nobuhiko Kokubo, Miho Tagawa, Mitsuaki Shimizu, Yosuke Tsunooka, Junji Ohara, Shunta Harada, Fumihiro Fujie, Hisashi Yamada
Publikováno v:
Applied Physics Express. 11:111001
The threading edge dislocations in a GaN crystal are analyzed via micro-Raman spectroscopy mapping. A clear contrast image of the peak shift from a higher wavenumber to a lower wavenumber is simulated. The direction from the higher-wavenumber region