Výsledky vyhledávání - "Junji Naruse"

Low Gr/Gb sensitivity imbalance 3.2M CMOS image sensor with 2.2μm pixel

Autor: Hirofumi Yamashita, Junji Naruse, Makoto Monoi, Ikuko Inoue, Nagataka Tanaka

Publikováno v: SPIE Proceedings.

For CMOS image sensors with pixel size under 3μm pixel, the pixel architecture in which several photodiodes share floating diffusion and transistors tends to be adopted in order to improve full well capacity and sensitivity. In spite even in the afo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e9235427fa09dc6bb1bff2c88fdfad7
https://doi.org/10.1117/12.805849

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A 1/2.5-inch 8Mpixel CMOS image sensor with a staggered shared-pixel architecture and an FD-boost operation

Autor: Nagataka Tanaka, Makoto Monoi, Junji Naruse, Ryuta Okamoto, Akiko Mori, Hirofumi Yamashita

Publikováno v: ISSCC

In order to shrink pixel sizes for mobile phone cameras, several shared-pixel architectures have previously been proposed [1–3]. However, the use of conventional shared-pixel architectures leads to a Gr/Gb sensitivity imbalance because the Gr pixel

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7cb99e109f7201fb41e7f1af0a4f2143
https://doi.org/10.1109/isscc.2009.4977299

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High Gain and High Sensitive Blue-Ultraviolet Avalanche Photodiodes (APDs) of ZnSSe n+-i-p Structure Molecular Beam Epitaxy (MBE) Grown on p-type GaAs Substrates

Autor: Hiroyasu Maeta, Tomoki Abe, Junji Naruse, Katsushi Ikumi, Kouhei Miki, Koshi Ando, Akihiro Ehara, Hirofumi Kasada

Publikováno v: Japanese Journal of Applied Physics. 44:L508

High gain and high sensitive blue-ultraviolet avalanche photodiodes (APDs) are developed using high quality ZnSSe n+-i-p hetero-structure grown on p-type GaAs substrates by molecular beam epitaxy (MBE). The short wavelength APDs have been realized by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18d9d072e61763ed08f6691d729e31c6
https://doi.org/10.1143/jjap.44.l508

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