Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Junji Kataoka"'
Publikováno v:
MRS Bulletin. 46:1044-1052
Publikováno v:
Japanese Journal of Applied Physics. 62:SI1009
In this study, a novel phenomenological model is developed to predict the etching yields of SiO2 and SiN x substrates by fluorocarbon and hydrofluorocarbon ions. The CF layer thickness and reactive layer chemistry are described, which significantly a
Autor:
Noboru Hiwasa, Junji Kataoka, Norikatsu Sasao, Shuichi Kuboi, Daiki Iino, Kazuaki Kurihara, Hiroyuki Fukumizu
Publikováno v:
Applied Physics Express. 15:106002
In the dry etching process using fluorocarbon (FC) gas, deposited amorphous-CF x (a-CF x ) films in patterns, such as holes and trenches, strongly affect the etching performance. The influence of the FC gas molecular structures and their atomic compo
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We have demonstrated and experimentally verified the advantages of In-Zn-O (InZnO) channel compared with In-Ga-Zn-O (InGaZnO) channel for high performance oxide semiconductor channel field effect transistor (FET) with both ultralow off-state leakage
Autor:
Kuniyuki Kakushima, Takuya Hoshii, Junji Kataoka, SungLin Tsai, Hitoshi Wakabayashi, Kazuo Tsutsui
Publikováno v:
Applied Physics Express (APEX). :21002
N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films was verified by Si ion implantation followed by activation annealing. The activation of dopants was found above an annealing temperature of 800 °C. Under a dose of 2 × 1015
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:124006
SiC focus rings are mount on the stage at the surround of wafer in the reactive ion etching chamber, in order to make the etching rate uniform. SiC is used for the material of focus ring because it has higher plasma resistance than Si. We investigate
Publikováno v:
2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM).
Suppressing the channel shortening effect is a key to realize a short channel InGaZnO Thin-Film-Transistor (TFT). We investigated the lateral diffusion length L_{ext}} of low-resistivity region formed in InGaZnO quantitatively. The TFTs with In-Sn-O
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBJ07
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBJ03
Publikováno v:
Electrochemistry. 76:656-660
Planar optical waveguides (OWGs) formed by ion-exchange in glass are useful to fabricate optical sensors for biochemical and environmental use. Conventional OWGs need delicate equipment to adjust incident light position and angle. In order to overcom