Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Junil Lim"'
Publikováno v:
ACS Applied Electronic Materials. 4:2005-2014
Autor:
Woojin Jeon, Dae Seon Kwon, Dong Gun Kim, Haengha Seo, Cheol Seong Hwang, Junil Lim, Tae Kyun Kim
Publikováno v:
ACS Applied Materials & Interfaces. 13:23915-23927
Ruthenium (Ru) thin films deposited via atomic layer deposition (ALD) with a normal sequence and discrete feeding method (DFM) and their performance as a bottom electrode of dynamic random-access memory (DRAM) capacitors were compared. The DFM-ALD wa
Autor:
Dae Seon Kwon, Woojin Jeon, Junil Lim, Sang Hyeon Kim, Cheol Seong Hwang, Dong Gun Kim, Cheol Hyun An
Publikováno v:
Journal of Materials Chemistry C. 9:1572-1583
Atomic layer deposited TiO2- and Al2O3-based high-k gate insulators (GIs) were examined for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application. The single-layer TiO2 film showed a too high leakage current to be use
Autor:
Cheol Hyun An, Sang Hyeon Kim, Dong Gun Kim, Woojin Jeon, Junil Lim, Cheol Seong Hwang, Dae Seon Kwon
Publikováno v:
Journal of Materials Chemistry C. 8:6993-7004
In this study, ruthenium (Ru) thin films were grown on Ta2O5, Si, Ru, and Pt substrates (Ta2O5, Ru, and Pt are thin films, and Si is a bulk wafer) through atomic layer deposition (ALD) using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru [Rude
Autor:
Haengha Seo, In Won Yeu, Dae Seon Kwon, Dong Gun Kim, Junil Lim, Tae Kyun Kim, Heewon Paik, Jung‐Hae Choi, Cheol Seong Hwang
Publikováno v:
Advanced Electronic Materials. 8:2200099
Autor:
Woongkyu Lee, Haeryoung Kim, Cheol Seong Hwang, Tae Kyun Kim, Junil Lim, Dae Seon Kwon, Haengha Seo, Heewon Paik, Dong Gun Kim
Publikováno v:
Journal of Physics D: Applied Physics. 54:185110
Y2O3/TiO2 bilayer thin films and Y-doped TiO2 (YTO) thin films were deposited on a Ge substrate by atomic layer deposition at a substrate temperature of 250 °C. They were used as gate insulators to examine the electrical properties of Pt/TiN/TiO2/Y2
Autor:
Woongkyu Lee, Tae Kyun Kim, Junil Lim, Dae Seon Kwon, Haengha Seo, Cheol Seong Hwang, Dong Gun Kim
Publikováno v:
Advanced Electronic Materials. 7:2000819
Autor:
Junil Lim, Yumin Kim, Dong Gun Kim, Dae Seon Kwon, Soon Hyung Cha, Seong Tak Cho, Cheol Seong Hwang, Woongkyu Lee, Cheol Hyun An, Sang Hyeon Kim
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 13:1900373