Zobrazeno 1 - 10
of 280
pro vyhledávání: '"Junichi motohisa"'
Publikováno v:
Advanced Photonics Research, Vol 4, Iss 7, Pp n/a-n/a (2023)
Nanometer‐scaled light sources using III–V compound semiconductor nanowires (NWs) on Si are expected as building blocks for next‐generation Si photonics, bioimaging, on‐chip microscopy, and light detection and ranging (LiDAR) techniques. This
Externí odkaz:
https://doaj.org/article/4aade2cfc3e64abaa54fe8f5ae1e77a9
Creation of unexplored tunnel junction by heterogeneous integration of InGaAs nanowires on germanium
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-8 (2022)
Abstract Heteroepitaxy has inherent concerns regarding crystal defects originated from differences in lattice constant, thermal expansion coefficient, and crystal structure. The selection of III–V materials on group IV materials that can avoid thes
Externí odkaz:
https://doaj.org/article/d346599b59ba4a959488ae84dff69128
Publikováno v:
AIP Advances, Vol 7, Iss 12, Pp 125304-125304-5 (2017)
Composition controllability of vertical InGaAs nanowires (NWs) on Si integrated by selective area growth was characterized for Si photonics in the optical telecommunication bands. The pitch of pre-patterned holes (NW sites) changed to an In/Ga alloy-
Externí odkaz:
https://doaj.org/article/e4c759cf490a4acb8872436ecec0e860
Publikováno v:
2022 Compound Semiconductor Week (CSW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414146e31c532a998e02e6a4e0043397
https://doi.org/10.1109/csw55288.2022.9930398
https://doi.org/10.1109/csw55288.2022.9930398
Publikováno v:
ECS Transactions. 98:149-153
Abstract High performance transistors are required for the beyond CMOS in terms of low drive voltage, high drain current, high ION/IOFF ratio, and scalability. A superlattice (SL) resonance tunneling field-effect transistor (RTFET) achieves a steep s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::184b700cf88eee050c130b7efca6f005
https://doi.org/10.1149/09806.0149ecst
https://doi.org/10.1149/09806.0149ecst
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-9 (2020)
Scientific Reports
Scientific Reports
Excitonic properties in quantum dot (QD) structure are essential properties for applications in quantum computing, cryptography, and photonics. Top-down fabrication and bottom-up growth by self-assembling for forming the QDs have shown their usefulne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::13b183029b2f039540d5c84a261fba55
http://link.springer.com/article/10.1038/s41598-020-67625-y
http://link.springer.com/article/10.1038/s41598-020-67625-y
Publikováno v:
Japanese Journal of Applied Physics (JJAP). 62:SC1072
We investigated the beam profiles and polarization states in the low-temperature photoluminescence from vertical GaAs/InGaAs/GaAs core-multishell nanowire (NW) under continuous-wave and pulsed excitations. In the beam profile under pulsed excitation,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::099ab10228512139491a7d1e9bfc5f44
http://hdl.handle.net/2115/88971
http://hdl.handle.net/2115/88971
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1011
We characterized the current injection and electroluminescence (EL) properties of wurtzite (WZ) InP nanowire (NW) light-emitting diodes (LEDs) with axial junctions. The EL spectra of two samples with the same LED junction structure exhibited two diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0118042e56a629117a345c7781b020c1
https://doi.org/10.35848/1347-4065/aca985
https://doi.org/10.35848/1347-4065/aca985
Publikováno v:
ECS Transactions. 92:71-78
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::603694f8de68ff7627228f27414f2264
https://doi.org/10.1149/09204.0071ecst
https://doi.org/10.1149/09204.0071ecst
Publikováno v:
ACS Photonics. 6:260-264
We demonstrated vertical InGaAs nanowire (NW) array photodiodes on Si that were optically responsive to visible light (635 nm) and near-infrared light (∼1.55 μm). The vertical NWs were directly grown on Si by selective-area growth. Implementation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::507694ced40fec82bbf903d401bc783a
https://doi.org/10.1021/acsphotonics.8b01089
https://doi.org/10.1021/acsphotonics.8b01089