Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Junichi Tonotani"'
Autor:
Kazuo Tsutsui, Kikuchi Takuo, Hidehiko Yabuhara, Takeya Inoue, Hiroshi Iwai, Hitoshi Wakabayashi, Takuya Hoshii, Junichi Tonotani, Kuniyuki Kakushima, Kazuyuki Ito
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
In this paper, we examine the feasibility of reducing the on-resistance by introducing strain into the drift layer of Si vertical power devices. The strain effect on the resistance to vertical conduction in the $\mathrm{n}^{-}$-Si layer was evaluated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef7acc884c046d3acf2ccb3bc4f151ac
https://doi.org/10.1109/edtm.2019.8731121
https://doi.org/10.1109/edtm.2019.8731121
Autor:
Keiji Sugi, Tomomasa Ueda, Junichi Tonotani, Tatsunori Sakano, Nobuyoshi Saito, Hisashi Kameoka, Keiko Akimoto, Isao Amemiya, Yujiro Hara, Kentaro Miura, Hajime Yamaguchi, Shintaro Nakano
Publikováno v:
SID Symposium Digest of Technical Papers. 42:21-24
We have reduced threshold voltage shift of IGZO TFTs processed at 200°C under bias-temperature stress of Vg = 20 V at 70°C for 2000 s to 0.22 V by optimizing IGZO deposition and annealing conditions. A flexible AMOLED display with integrated gate d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a28ed71dca77138c149231a9e92afec
https://doi.org/10.1889/1.3621277
https://doi.org/10.1889/1.3621277
Publikováno v:
Japanese Journal of Applied Physics. 41:2220-2224
The role of N2 gas addition in the reactive ion etching (RIE) processes for aluminum wiring and polysilicon gate fabrication was investigated. With an increase in the amount of N2 gas added to the etching gas, the pattern profile changed from a rever
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa3e940000a3b6a4eb77c6684e98cf99
https://doi.org/10.1143/jjap.41.2220
https://doi.org/10.1143/jjap.41.2220
Autor:
Nao Shinoda, Ryota Fujitsuka, Seiji Onoue, Katsuyuki Sekine, Junichi Tonotani, Hiroshi Itokawa
Publikováno v:
Japanese Journal of Applied Physics. 55:04EB09
The behavior of nitrogen (N) atoms in plasma-nitrided silicon oxide (SiO2) formed by chemical vapor deposition (CVD) was characterized by physical analysis and from electrical properties. The changes in the chemical bonding and distribution of N in p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4cd63c38a8292b9f2bdd1e602cbccfd7
https://doi.org/10.7567/jjap.55.04eb09
https://doi.org/10.7567/jjap.55.04eb09
Autor:
Ryotaro Matsuda, Akira Miura, Junichi Tonotani, Hiroshi Kamata, Ito Yasuo, Hideki Ohkawa, Yoji Yuge
Publikováno v:
Applied spectroscopy. 62(9)
The crystallinities of bamboo-based carbon filaments have been examined by Raman spectroscopy as a nondestructive means of analysis of the historical lamp (ca. 1890s) manufactured by Ichisuke Fujioka of Japan, and the results have been compared with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::477c72b78af0cb2182edb02e9ef41baa
https://pubmed.ncbi.nlm.nih.gov/18801237
https://pubmed.ncbi.nlm.nih.gov/18801237
Autor:
Junichi Tonotani
Publikováno v:
2006 International Workshop on Nano CMOS.
Summary form given only: A stacked film structure of lanthanum oxide and silicon (La2O3/Si) is considered to be used in MOSFETs in the Nano-CMOS era since La2O3 is a promising high-k gate insulator. In the substrate contact formation process, La2O3 s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe47bec52941b0105b2f4fe44c33eda
https://doi.org/10.1109/iwnc.2006.4570999
https://doi.org/10.1109/iwnc.2006.4570999
Publikováno v:
Japanese Journal of Applied Physics. 41:3963-3964
We measured the electron density of reactive plasma using a plasma oscillation probe and analyzed the mode change of power coupling during etching. The unique behavior of plasmas containing reactive negative ions is clarified. The change in the plasm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d077039599419000c92c26125e7906d2
https://doi.org/10.1143/jjap.41.3963
https://doi.org/10.1143/jjap.41.3963
Publikováno v:
Japanese Journal of Applied Physics. 44:2971
The role of CHF3 gas addition in reactive ion etching (RIE) processes using inductively coupled plasma for aluminum wirings were investigated. With increasing of the amount of CHF3 gas addition to the etching gas, the pattern profile changed from rev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5781f37380e7794c6ae14a3b835c5526
https://doi.org/10.1143/jjap.44.2971
https://doi.org/10.1143/jjap.44.2971
Publikováno v:
Japanese Journal of Applied Physics. 44:114
Stacked films of chromium oxide and chromium (Cr2O3/Cr) have been commonly used as a photomask for the lithographic process of integrated circuit fabrication. It has been found, however, that the Cr2O3/Cr films were etched during the oxygen plasma as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e035bb99e149195ec13597ec6b3ab82
https://doi.org/10.1143/jjap.44.114
https://doi.org/10.1143/jjap.44.114
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:2163
Dry etching characteristics of TiN film have been studied in the case of using Ar/CHF3, Ar/Cl2, and Ar/BCl3 chemistries in an inductively coupled plasma. The TiN film was not etched at all without the addition of CHF3, BCl3, or Cl2 to the Ar gas flow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b07f579f06b16d01c0d62d834ae9a1d
https://doi.org/10.1116/1.1612517
https://doi.org/10.1116/1.1612517