Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Junichi Tatemichi"'
New control system of the multiple filaments in the large ion source for ion doping system iG6 Ver.2
Autor:
Yuya Hirai, Kenji Watari, Koichi Orihira, Takeshi Matsumoto, Junichi Tatemichi, Yutaka Inouchi
Publikováno v:
MRS Advances. 7:1495-1498
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be73c8bc787b720ba2fd3ddb62fc0dbf
https://doi.org/10.1557/s43580-022-00388-y
https://doi.org/10.1557/s43580-022-00388-y
Publikováno v:
ECS Transactions. 109:67-78
Amorphous indium-gallium-zinc oxide (a-IGZO) attracts much attention for next-generation flat-panel displays due to the large band gap, visible light transparency, printability, thickness-uniformity and low-temperature in film deposition. Using a-IGZ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc58b1b751e9751389f926cd405f1569
https://doi.org/10.1149/10906.0067ecst
https://doi.org/10.1149/10906.0067ecst
Autor:
Y. Setoguchi, Takuya Ikeda, Eiji Takahashi, Junichi Tatemichi, T. Ui, Daisuke Matsuo, K. Yasuta, Yasunori Andoh, S. Dohi, T. Sakai
Publikováno v:
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We investigated electron transport properties of an argon ion (Ar+) implanted a-IGZO film on glass by Hall measurement combined with wet etching. As a result, we obtained concentration and mobility of electron as a function of depth in the a-IGZO fro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::192196007aeb3801221201f8b33c38d1
https://doi.org/10.23919/am-fpd52126.2021.9499156
https://doi.org/10.23919/am-fpd52126.2021.9499156
Autor:
Keisuke Yasuta, Toshimasa Ui, Tomokazu Nagao, Daisuke Matsuo, Toshihiko Sakai, Yoshitaka Setoguchi, Eiji Takahashi, Yasunori Andoh, Junichi Tatemichi
Publikováno v:
Proceedings of the International Display Workshops. :956
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e5301386e66eb70e69ad20e80ed385c
https://doi.org/10.36463/idw.2021.0956
https://doi.org/10.36463/idw.2021.0956
Autor:
Toshiyuki Sameshima, Tomokazu Nagao, Takashi Sugawara, Junichi Tatemichi, Masahiko Hasumi, Y. Inouchi
Publikováno v:
2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
We report formation of low resistivity n-type doped silicon region at 300°C by the method of two-step ion implantation. Phosphorus ions with a dose of 2×1014 cm−2 at 70 keV followed by hydrogen ions with 1×1016 cm−2 at 8 keV were implanted at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572d359d6f76cfa7713256d281916e2f
https://doi.org/10.23919/am-fpd.2019.8830611
https://doi.org/10.23919/am-fpd.2019.8830611
Autor:
Takuma Uehara, Takashi Sugawara, Masahiko Hasumi, Yutaka Inouchi, Junichi Tatemichi, Keisuke Yasuta, Toshiyuki Sameshima, Tomokazu Nagao
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
The H+ or Ar+ precursor implantation at room temperature (RT) was proposed to activate boron atoms subsequently implanted in single crystalline silicon by post heating at a low temperature. The two-step ion implantation of 1.5×1016 cm−2 H+ at 8 ke
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003e3181537aa1483720789b4528b4b3
https://doi.org/10.1109/iit.2018.8807972
https://doi.org/10.1109/iit.2018.8807972
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
A plasma flood gun (PFG) has been developed for NISSIN Implanter “iG5” [1] and “iG6” for Gen5.5 and 6.0 FPD processing under high vacuum. This PFG contains a multi-cusp type arc chamber with a filament cathode. It generates the ions and elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3a4e467588e482f23cdf57a90c9c765
https://doi.org/10.1109/iit.2018.8807919
https://doi.org/10.1109/iit.2018.8807919
Autor:
Toshiyuki Sameshima, Y. Inouchi, Keisuke Yasuta, Junichi Tatemichi, Tomokazu Nagao, Masahiko Hasumi, Takuma Uehara
Publikováno v:
2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
Ion implantation of 1.5xl016-cm−2 H+ at 8 keV or 1.0xl014-cm−2 Ar+ at 70 keV was carried out at room temperature (RT) to crystalline silicon in advance of ion implantation of 1.0×10-15-cm−2B+ at RT. Decrease in the crystalline volume ratio and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a37c87b1559631c4c2fabb1117ff00a2
https://doi.org/10.23919/am-fpd.2018.8437361
https://doi.org/10.23919/am-fpd.2018.8437361
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
For the manufacturing process of display for mobile devices using Low Temperature Poly-crystalline Silicon Thin Film Transistor (LTPS-TFT), ion doping processes have been required. Nissin developed ion doping systems which were referred as iG series
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87b56b32c23e85284346183131fc62a3
https://doi.org/10.1109/iit.2016.7882880
https://doi.org/10.1109/iit.2016.7882880
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
Ion doping tools which have ability to process large size glass substrate with high productivity are briefly described. Such tools might develop new fields that utilize ion implantation technology. So far we tried several applications. In this study,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2247b4fb0e45b94c61d3d6a307f00a3
https://doi.org/10.1109/iit.2016.7882866
https://doi.org/10.1109/iit.2016.7882866